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M58BW016FT	文件：627.94 Kbytes Page：69 Pages	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016FT	文件：1.35281 Mbytes Page：70 Pages	16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	NUMONYXNUMONYX 恒忆	NUMONYX
M58BW016FT	文件：1.28397 Mbytes Page：70 Pages	16 Mbit (512 Kbit x 32, boot block, burst) Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
M58BW016FT70T3FF	文件：627.94 Kbytes Page：69 Pages	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016FT70T3FT	文件：627.94 Kbytes Page：69 Pages	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016FT70ZA3FF	文件：627.94 Kbytes Page：69 Pages	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016FT70ZA3FT	文件：627.94 Kbytes Page：69 Pages	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016FT7T3FF	文件：1.35281 Mbytes Page：70 Pages	16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	NUMONYXNUMONYX 恒忆	NUMONYX
M58BW016FT7T3FT	文件：1.35281 Mbytes Page：70 Pages	16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	NUMONYXNUMONYX 恒忆	NUMONYX
M58BW016FT7ZA3FF	文件：1.35281 Mbytes Page：70 Pages	16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	NUMONYXNUMONYX 恒忆	NUMONYX
M58BW016FT7ZA3FT	文件：1.35281 Mbytes Page：70 Pages	16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	NUMONYXNUMONYX 恒忆	NUMONYX
M58BW016FT80T3FF	文件：627.94 Kbytes Page：69 Pages	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016FT80T3FT	文件：627.94 Kbytes Page：69 Pages	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016FT80ZA3FF	文件：627.94 Kbytes Page：69 Pages	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016FT80ZA3FT	文件：627.94 Kbytes Page：69 Pages	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58BW016FT8T3FF	文件：1.35281 Mbytes Page：70 Pages	16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	NUMONYXNUMONYX 恒忆	NUMONYX
M58BW016FT8T3FT	文件：1.35281 Mbytes Page：70 Pages	16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	NUMONYXNUMONYX 恒忆	NUMONYX
M58BW016FT8ZA3FF	文件：1.35281 Mbytes Page：70 Pages	16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	NUMONYXNUMONYX 恒忆	NUMONYX
M58BW016FT8ZA3FT	文件：1.35281 Mbytes Page：70 Pages	16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp	NUMONYXNUMONYX 恒忆	NUMONYX
M58BW016BB	文件：895.86 Kbytes Page：63 Pages	16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS

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详细参数

型号：
M58BW016FT
制造商：
NUMONYX
制造商全称：
Numonyx B.V
功能描述：
16 Mbit(512 Kbit x 32, boot block, burst) 3 V supply Flash memories

供应商	型号	品牌	批号	封装	库存	备注	价格
中科航电（深圳）电子集团有限公司	M58BW16DB8T3FPTX	ST		QFP80	93480	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价
深圳市凯斯宇科技有限公司	M58BW16FB4T3F	Numonyx-ADIVISIONOFMICRO	2022	ICFLASH16MBIT45NS80PQFP	5058	原厂原装正品,价格超越代理	询价
深圳市科恒伟业电子有限公司	M58BW16FB4T3F	MICRON	1844+	PQFP	6528	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市百视威讯电子科技有限公司	M58BW16FB4T3F		23+	N/A	85200	正品授权货源可靠	询价
艾睿国际（香港）有限公司	M58BW16FB4T3F	MICRON/美光	2021+	PQFP-80	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
贸泽芯城（深圳）电子科技有限公司	M58BW16FB4T3F	MICRON/美光		PQFP-80	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市中赛美电子科技有限公司	M58BW16FB4T3F	MICRON/美光	22+	NA	8000	中赛美只做原装只有原装	询价
深圳市华来深电子有限公司	M58BW16FB4T3F	MICRON	23+	PQFP-80	8560	受权代理!全新原装现货特价热卖!	询价
兆亿微波(北京)科技有限公司	M58BW16FB4T3F	Micron			99		询价
深圳市赛尔通科技有限公司	M58BW16FB4T3T	Numonyx/STMi	23+	80-PQFP	65480		询价

更多M58BW016FT供应商更新时间2024-5-23 16:22:00

详细参数

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