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M45PE10-VMP6TG TR	文件：100 bytes Page：1 Pages	包装：托盘封装/外壳：8-VDFN 裸露焊盘类别：集成电路（IC）存储器描述：IC FLASH 1MBIT SPI 75MHZ 8VDFPN	MicronMicron Technology Inc. 镁光美国镁光科技有限公司	Micron
M45PE10-VMP6	文件：426.82 Kbytes Page：34 Pages	1Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda25MHzSPIBusInterface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M45PE10-VMP6G	文件：355.05 Kbytes Page：45 Pages	1Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M45PE10-VMP6G	文件：990.86 Kbytes Page：47 Pages	1-Mbit,page-erasableserialflashmemorywithbyte-alterabilityand75MHzSPIbusinterface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated	NUMONYXNUMONYX 恒忆	NUMONYX
M45PE10-VMP6G	文件：426.82 Kbytes Page：34 Pages	1Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda25MHzSPIBusInterface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M45PE10-VMP6P	文件：990.86 Kbytes Page：47 Pages	1-Mbit,page-erasableserialflashmemorywithbyte-alterabilityand75MHzSPIbusinterface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated	NUMONYXNUMONYX 恒忆	NUMONYX
M45PE10-VMP6P	文件：355.05 Kbytes Page：45 Pages	1Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M45PE10-VMP6P	文件：426.82 Kbytes Page：34 Pages	1Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda25MHzSPIBusInterface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M45PE10-VMP6T	文件：426.82 Kbytes Page：34 Pages	1Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda25MHzSPIBusInterface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M45PE10-VMP6TG	文件：426.82 Kbytes Page：34 Pages	1Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda25MHzSPIBusInterface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M45PE10-VMP6TG	文件：355.05 Kbytes Page：45 Pages	1Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M45PE10-VMP6TG	文件：990.86 Kbytes Page：47 Pages	1-Mbit,page-erasableserialflashmemorywithbyte-alterabilityand75MHzSPIbusinterface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated	NUMONYXNUMONYX 恒忆	NUMONYX
M45PE10-VMP6TP	文件：990.86 Kbytes Page：47 Pages	1-Mbit,page-erasableserialflashmemorywithbyte-alterabilityand75MHzSPIbusinterface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated	NUMONYXNUMONYX 恒忆	NUMONYX
M45PE10-VMP6TP	文件：355.05 Kbytes Page：45 Pages	1Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M45PE10-VMP6TP	文件：426.82 Kbytes Page：34 Pages	1Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda25MHzSPIBusInterface Description TheM45PE10isa1Mbit(128Kbx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrated	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS

产品属性

产品编号：
M45PE10-VMP6TG TR
制造商：
Micron Technology Inc.
类别：
集成电路（IC） > 存储器
包装：
托盘
存储器类型：
非易失
存储器格式：
闪存
技术：
FLASH - NOR
存储容量：
1Mb（128K x 8）
存储器接口：
SPI
写周期时间 - 字，页：
3ms
电压 - 供电：
2.7V ~ 3.6V
工作温度：
-40°C ~ 85°C（TA）
安装类型：
表面贴装型
封装/外壳：
8-VDFN 裸露焊盘
供应商器件封装：
8-VDFPN（6x5）（MLP8）
描述：
IC FLASH 1MBIT SPI 75MHZ 8VDFPN

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	M45PE10VMP6TGTR	Micron	22+	8VDFPN (6x5) (MLP8)	9000	原厂渠道,现货配单	询价
深圳市安富世纪电子有限公司	M45PE10VMP6TGTR	Micron	23+	8VDFPN (6x5) (MLP8)	8000	只做原装现货	询价
中科航电(深圳)半导体技术有限公司	M45PE10-VMP6TGTR	MicronTechnologyInc.	19+	8-VDFPN(6x5)(MLP8)	26580	存储IC一手货源,极具优势!	询价
瀚佳科技(深圳)有限公司	M45PE10-VMP6TGTR	Micron Technology Inc.	21+	8-VDFPN(6x5)(MLP8)	56200	一级代理/放心采购	询价
深圳市科雨电子有限公司	M45PE10-VMP6TGTR	MICRON	20+	8-VDFPN	1001	就找我吧!--邀您体验愉快问购元件!	询价
深圳市旺财半导体有限公司	M45PE10-VMP6TGTR	Micron	23+	8-QFN	36500	原装正品现货库存QQ:2987726803	询价
深圳市宏捷佳电子科技有限公司	M45PE10-VMP6TGTR	Micron Technology Inc.	24+	8-VDFN 裸露焊盘	9350	独立分销商,公司只做原装，诚心经营,免费试样正品保证	询价
深圳市云迪科技有限公司	M45PE10-VMS6G	Numonyx	22+	DNP-8	10000	原装正品优势现货供应	询价
深圳市振宏微科技有限公司	M45PE10-VMS6G	ST	23+	SOP-8	16900	支持样品,原装现货,提供技术支持!	询价
深圳市赛特兴科技有限公司	M45PE10-VMS6G	ST	23+	SOP-8	16900	正规渠道,只有原装!	询价

更多M45PE10-VMP6TG TR供应商更新时间2024-6-1 10:30:00

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