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M36W0R6050T1中文资料NUMONYX数据手册PDF规格书

M36W0R6050T1
厂商型号

M36W0R6050T1

功能描述

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

文件大小

429.42 Kbytes

页面数量

22

生产厂商 numonyx
企业简称

NUMONYX

中文名称

numonyx官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2025-7-1 23:00:00

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M36W0R6050T1规格书详情

Description

The M36W0R6050T1 and M36W0R6050B1 combine two memories in a Multi-Chip Package:

● a 64-Mbit, Multiple Bank Flash memory, the M58WR064HT/B, and

● a 32-Mbit Pseudo SRAM, the M69KB048BD.

The purpose of this document is to describe how the two memory components operate with respect to each other. It must be read in conjunction with the M58WR064HT/B and M69KB048BD datasheets, where all specifications required to operate the Flash memory and PSRAM components are fully detailed. These datasheets are available from the Numonyx web site: www.numonyx.com.

Features

■ Multi-Chip Package

– 1 die of 64 Mbit (4 Mb × 16) Flash memory

– 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM

■ Supply voltage

– VDDF = VDDP = VDDQF = 1.7 V to 1.95 V

■ Low power consumption

■ Electronic signature

– Manufacturer Code: 20h

– Device code (top flash configuration), M36W0R6050T1: 8810h

– Device code (bottom flash configuration), M36W0R6050B1: 8811h

■ Package

– ECOPACK®

Flash memory

■ Programming time

– 8 µs by Word typical for Fast Factory Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

■ Memory blocks

– Multiple Bank memory array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

■ Synchronous / Asynchronous Read

– Synchronous Burst Read mode: 66 MHz

– Asynchronous/ Synchronous Page Read mode

– Random Access: 70 ns

■ Dual operations

– Program Erase in one Bank while Read in others

– No delay between Read and Write operations

■ Block locking

– All blocks locked at Power-up

– Any combination of blocks can be locked

– WPF for Block Lock-Down

■ Security

– 128-bit user programmable OTP cells

– 64-bit unique device number

■ Common Flash Interface (CFI)

■ 100 000 program/erase cycles per block

PSRAM

■ Access time: 70 ns

■ Asynchronous Page Read

– Page size: 8 words

– First access within page: 70 ns

– Subsequent read within page: 20 ns

■ Three Power-down modes

– Deep Power-Down

– Partial Array Refresh of 4 Mbits

– Partial Array Refresh of 8 Mbits

产品属性

  • 型号:

    M36W0R6050T1

  • 制造商:

    NUMONYX

  • 制造商全称:

    Numonyx B.V

  • 功能描述:

    64 Mbit(4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit(2 Mb 】16) PSRAM, multi-chip package

供应商 型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
84
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ST
2016+
BGA
6069
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询价
ST
样品
10
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ST
2016+
BGA
6523
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询价
NUMONYX
25+
BGA
3000
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ST/意法
22+
BGA
3000
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询价
ST
08+PBF
BGA
70
现货
询价
ST/意法
24+
BGA
120
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询价
ST/意法
2023+
BGA
8635
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ST
22+
BGA
12245
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询价