首页>M36W0R6050B1>规格书详情

M36W0R6050B1中文资料意法半导体数据手册PDF规格书

PDF无图
厂商型号

M36W0R6050B1

功能描述

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

文件大小

223.86 Kbytes

页面数量

22

生产厂商

STMICROELECTRONICS

中文名称

意法半导体

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-12-15 23:01:00

人工找货

M36W0R6050B1价格和库存,欢迎联系客服免费人工找货

M36W0R6050B1规格书详情

描述 Description

The M36W0R6050T1 and M36W0R6050B1 combine two memories in a Multi-Chip Package:

● a 64-Mbit, Multiple Bank Flash memory, the M58WR064HT/B, and

● a 32-Mbit Pseudo SRAM, the M69KB048BD.

The purpose of this document is to describe how the two memory components operate with respect to each other. It must be read in conjunction with the M58WR064HT/B and M69KB048BD datasheets, where all specifications required to operate the Flash memory and PSRAM components are fully detailed. These datasheets are available from the ST web site: www.st.com.

特性 Features

■ Multi-Chip Package

– 1 die of 64 Mbit (4 Mb × 16) Flash memory

– 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM

■ Supply voltage

– VDDF = VDDP = VDDQF = 1.7 V to 1.95 V

■ Low power consumption

■ Electronic signature

– Manufacturer Code: 20h

– Device code (top flash configuration), M36W0R6050T1: 8810h

– Device code (bottom flash configuration), M36W0R6050B1: 8811h

■ Package

– ECOPACK®

Flash memory

■ Programming time

– 8 µs by Word typical for Fast Factory Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

■ Memory blocks

– Multiple Bank memory array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

■ Synchronous / Asynchronous Read

– Synchronous Burst Read mode: 66 MHz

– Asynchronous/ Synchronous Page Read mode

– Random Access: 70 ns

■ Dual operations

– Program Erase in one Bank while Read in others

– No delay between Read and Write operations

■ Block locking

– All blocks locked at Power-up

– Any combination of blocks can be locked

– WPF for Block Lock-Down

■ Security

– 128-bit user programmable OTP cells

– 64-bit unique device number

■ Common Flash Interface (CFI)

■ 100 000 program/erase cycles per block

PSRAM

■ Access time: 70 ns

■ Asynchronous Page Read

– Page size: 8 words

– First access within page: 70 ns

– Subsequent read within page: 20 ns

■ Three Power-down modes

– Deep Power-Down

– Partial Array Refresh of 4 Mbits

– Partial Array Refresh of 8 Mbits

产品属性

  • 型号:

    M36W0R6050B1

  • 制造商:

    NUMONYX

  • 制造商全称:

    Numonyx B.V

  • 功能描述:

    64 Mbit(4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit(2 Mb 】16) PSRAM, multi-chip package

供应商 型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
439
优势代理渠道,原装正品,可全系列订货开增值税票
询价
Micron Technology Inc.
25+
-
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
SST
原厂封装
9800
原装进口公司现货假一赔百
询价
Micron Technology Inc.
21+
54-VFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
ST
22+
BGA
12245
现货,原厂原装假一罚十!
询价
MICRON/美光
22+
NA
8000
中赛美只做原装 只有原装
询价
Micron
22+
9000
原厂渠道,现货配单
询价
Micron Technology Inc.
24+
-
56200
一级代理/放心采购
询价
ST
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ST
23+
BGA
12800
公司只有原装 欢迎来电咨询。
询价