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M36W0R6050B1ZAQE规格书详情
Description
The M36W0R6050T1 and M36W0R6050B1 combine two memories in a Multi-Chip Package:
● a 64-Mbit, Multiple Bank Flash memory, the M58WR064HT/B, and
● a 32-Mbit Pseudo SRAM, the M69KB048BD.
The purpose of this document is to describe how the two memory components operate with respect to each other. It must be read in conjunction with the M58WR064HT/B and M69KB048BD datasheets, where all specifications required to operate the Flash memory and PSRAM components are fully detailed. These datasheets are available from the ST web site: www.st.com.
Features
■ Multi-Chip Package
– 1 die of 64 Mbit (4 Mb × 16) Flash memory
– 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM
■ Supply voltage
– VDDF = VDDP = VDDQF = 1.7 V to 1.95 V
■ Low power consumption
■ Electronic signature
– Manufacturer Code: 20h
– Device code (top flash configuration), M36W0R6050T1: 8810h
– Device code (bottom flash configuration), M36W0R6050B1: 8811h
■ Package
– ECOPACK®
Flash memory
■ Programming time
– 8 µs by Word typical for Fast Factory Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
■ Memory blocks
– Multiple Bank memory array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
■ Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 66 MHz
– Asynchronous/ Synchronous Page Read mode
– Random Access: 70 ns
■ Dual operations
– Program Erase in one Bank while Read in others
– No delay between Read and Write operations
■ Block locking
– All blocks locked at Power-up
– Any combination of blocks can be locked
– WPF for Block Lock-Down
■ Security
– 128-bit user programmable OTP cells
– 64-bit unique device number
■ Common Flash Interface (CFI)
■ 100 000 program/erase cycles per block
PSRAM
■ Access time: 70 ns
■ Asynchronous Page Read
– Page size: 8 words
– First access within page: 70 ns
– Subsequent read within page: 20 ns
■ Three Power-down modes
– Deep Power-Down
– Partial Array Refresh of 4 Mbits
– Partial Array Refresh of 8 Mbits
产品属性
- 型号:
M36W0R6050B1ZAQE
- 制造商:
STMICROELECTRONICS
- 制造商全称:
STMicroelectronics
- 功能描述:
64 Mbit(4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit(2 Mb 】16) PSRAM, multi-chip package
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
23+ |
N/A |
85700 |
正品授权货源可靠 |
询价 | |||
ST/意法 |
BGA |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
ST |
2021+ |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ST/意法 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法 |
BGA |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
ST/意法 |
21+ |
BGA |
5000 |
原装现货/假一赔十/支持第三方检验 |
询价 | ||
ST/意法 |
2022+ |
BGA |
5952 |
询价 | |||
ST |
21+ |
BGA |
12000 |
进口原装正品现货 |
询价 | ||
原装正品 |
BGA |
2251 |
国内领先的集成电路专业配单!量大可发货!可开17%增值 |
询价 | |||
ST |
BGA |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 |