| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS |
详细参数
- 型号：
M36DR
- 制造商：
STMICROELECTRONICS
- 制造商全称：
STMicroelectronics
- 功能描述：
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
1635+ |
BGA |
6000 |
好渠道!好价格!一片起卖! |
询价 | ||
ST |
22+ |
BGA |
2560 |
绝对原装!现货热卖! |
询价 | ||
3000 |
公司存货 |
询价 | |||||
ST |
2339+ |
SOP |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
ST |
2020+ |
原厂封装 |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
ST |
20+ |
BGA |
35830 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ST |
2023+ |
BGA |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
ST |
21+ |
BGA |
35210 |
一级代理/放心采购 |
询价 | ||
ST |
2021+ |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ST |
2022+ |
SOP |
5345 |
授权代理分销商,现货库存可持续供货! |
询价 |
相关规格书
更多- M36DR432A100ZA6C
- M36DR432A10CZA6
- M36DR432A120ZA6C
- M36DR432A12CZA6T
- M36DR432AD12ZA6T
- M36DR432ADZA
- M36DR432B
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相关库存
更多- M36DR432A100ZA6T
- M36DR432A10CZA6T
- M36DR432A120ZA6T
- M36DR432AD10ZA6T
- M36DR432AD85ZA6T
- M36DR432AZA
- M36DR432B100ZA6C
- M36DR432B120ZA6C
- M36DR432BD
- M36DR432BD12ZA6T
- M36DR432-ZAT
- M36DR864CB85ZA6T
- M36KPC000X01
- M36L0R7040B0ZAQE
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- M36L0R7050U1ZAME
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- M36L0R7050U3ZSF TR
- M36L0R7060B1ZAQE
- M36L0R7060B2ZAQE
- M36L0R7060L1
- M36L0R7060L1ZAMF
- M36L0R7060L3ZSE
- M36L0R7060L3ZSF TR
- M36L0R7060T1ZAQE
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