M36DR432AD10ZA6T集成电路（IC）的存储器规格书PDF中文资料

M36DR432AD10ZA6T属于集成电路（IC）的存储器。由意法半导体集团制造生产的M36DR432AD10ZA6T存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

SUMMARY DESCRIPTION

The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM.

The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied with all the bits erased (set to ‘1’).

FEATURES SUMMARY

■ Multiple Memory Product

– 1 bank of 32 Mbit (2Mb x16) Flash Memory

– 1 bank of 4 Mbit (256Kb x16) SRAM

■ SUPPLY VOLTAGE

– VDDF = VDDS =1.65V to 2.2V

– VPPF = 12V for Fast Program (optional)

■ ACCESS TIMES: 85ns, 100ns, 120ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code, M36DR432AD: 00A0h

– Bottom Device Code, M36DR432BD: 00A1h

FLASH MEMORY

■ MEMORY BLOCKS

– Dual Bank Memory Array: 4 Mbit, 28 Mbit

– Parameter Blocks (Top or Bottom location)

■ PROGRAMMING TIME

– 10µs by Word typical

– Double Word Program Option

■ ASYNCHRONOUS PAGE MODE READ

– Page Width: 4 Words

– Page Access: 35ns

– Random Access: 85ns, 100ns, 120ns

■ DUAL BANK OPERATIONS

– Read within one Bank while Program or

Erase within the other

– No delay between Read and Write operations

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WPF for Block Lock-Down

■ COMMON FLASH INTERFACE (CFI)

– 64 bit Unique Device Identifier

– 64 bit User Programmable OTP Cells

■ ERASE SUSPEND and RESUME MODES

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

SRAM

■ 4 Mbit (256Kb x16)

■ LOW VDDS DATA RETENTION: 1.0V

■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS