M30042040054X0ISAY资料datasheet下载库存现货第2页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M30042040108X0IWAR	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb, 文件：1.14047 Mbytes 页数：52 Pages	RENESAS 瑞萨	RENESAS
M30042040108X0IWAY	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb, 文件：1.14047 Mbytes 页数：52 Pages	RENESAS 瑞萨	RENESAS
M30042040108X0PSAR	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb, 文件：1.14047 Mbytes 页数：52 Pages	RENESAS 瑞萨	RENESAS
M30042040108X0PSAY	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb, 文件：1.14047 Mbytes 页数：52 Pages	RENESAS 瑞萨	RENESAS
M30042040108X0PWAR	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb, 文件：1.14047 Mbytes 页数：52 Pages	RENESAS 瑞萨	RENESAS
M30042040108X0PWAY	文件：1.14047 Mbytes Page：52 Pages	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb, 文件：1.14047 Mbytes 页数：52 Pages	RENESAS 瑞萨	RENESAS
M3004316	文件：673.75 Kbytes Page：26 Pages	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind 文件：673.75 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
M3004316035NX	文件：673.75 Kbytes Page：26 Pages	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind 文件：673.75 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
M3004316035NX0IBCR	文件：673.75 Kbytes Page：26 Pages	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind 文件：673.75 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
M3004316035NX0IBCY	文件：673.75 Kbytes Page：26 Pages	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind 文件：673.75 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS

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产品属性

产品编号：
M30042040054X0ISAY
制造商：
Renesas Electronics America Inc
类别：
集成电路（IC） > 存储器
包装：
托盘
存储器类型：
非易失
存储器格式：
RAM
技术：
MRAM（磁阻式 RAM）
存储容量：
4Mb（1M x 4）
电压 - 供电：
2.7V ~ 3.6V
工作温度：
-40°C ~ 85°C
安装类型：
表面贴装型
封装/外壳：
8-SOIC（0.209"，5.30mm 宽）
供应商器件封装：
8-SOIC
描述：
IC RAM 4MBIT 54MHZ 8SOIC

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	M30042040054X0ISAY	Renesas Electronics America In	25+	8-SOIC(0.209 5.30mm 宽)	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市芯为科技有限公司	M30042040054X0ISAY	Renesas	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价
深圳市冠亿通科技有限公司	M30042040054X0ISAY	Renesas Electronics Corporatio			18500	全新原厂原装现货!受权代理!可送样可提供技术支持!	询价
艾睿（深圳）半导体有限公司	M30042040054X0IWAR	RENESAS(瑞萨)/IDT	2447	DFN-8(5x6)	315000	4000个/圆盘一级代理专营品牌!原装正品,优势现货,	询价
讯运(深圳/上海)电子有限公司	M30042040054X0IWAR	RENESAS(瑞萨)/IDT	2021+	DFN-8(5x6)	499		询价
深圳市鹏顺微电子科技有限公司	M30042040054X0PSAY	RENESAS(瑞萨)/IDT	2022+原装正品	SOIC-8	18000	支持工厂BOM表配单公司只做原装正品货	询价

更多M3004供应商更新时间2026-1-16 14:03:00

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