Non-Volatile 4Mb MRAM, Parallel Interface, 35ns and 45ns

The M3004316 is a high performance parallel interface non-volatile MRAM with 4Mbit density. It features SRAM compatible read and write access times of 35ns or 45ns. It operates from -40° to +85° (industrial version) and -40°C to +105°C (industrial plus version). The device is offered in 48-ball FBGA • Utilizing advanced pMTJ STT-MRAM technology\n• Parallel Asynchonous x16\n• 4Mb density\n• Low active write and read current\n• Operating temperature: Industrial -40°C to +85°C, Industrial Plus -40°C to +105°C \n• Operating Voltage: 2.70 V to 3.60V\n• Package: 44-pin TSOP, 54-pin TSOP, and 48-pin F;

Renesas

瑞萨

UMOS

MiraclePower

美禄/美阔

REMOTE CONTROL TRANSMITTER

ST

意法半导体

Package：8-SOIC（0.209"，5.30mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC RAM 4MBIT 54MHZ 8SOIC

Renesas Electronics America Inc

Package：8-WDFN 裸露焊盘；包装：托盘 类别：集成电路（IC） 存储器 描述：IC RAM 4MBIT 54MHZ 8DFN

Renesas Electronics America Inc

Package：8-VDFN 裸露焊盘；包装：托盘 类别：集成电路（IC） 存储器 描述：IC RAM 4MBIT SPI 54MHZ 8DFN

Renesas Electronics America Inc