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M29W640FT70ZA6F中文资料PDF规格书

M29W640FT70ZA6F
厂商型号

M29W640FT70ZA6F

参数属性

M29W640FT70ZA6F 封装/外壳为48-TFBGA;包装为卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带;类别为集成电路(IC) > 存储器;产品描述:IC FLASH 64MBIT PARALLEL 48TFBGA

功能描述

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

文件大小

478.8 Kbytes

页面数量

72

生产厂商 STMicroelectronics
企业简称

STMICROELECTRONICS意法半导体

中文名称

意法半导体(ST)集团官网

原厂标识
数据手册

下载地址一下载地址二原厂数据手册到原厂下载

更新时间

2024-6-21 18:11:00

M29W640FT70ZA6F规格书详情

Summary description

The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in units of 256 KByte (generally groups of four 64 KByte blocks), to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Features summary

■ Supply Voltage

– VCC = 2.7V to 3.6V for Program, Erase, Read

– VPP =12 V for Fast Program (optional)

■ Asynchronous Random/Page Read

– Page Width: 4 Words

– Page Access: 25ns

– Random Access: 60ns, 70ns

■ Programming Time

– 10 µs per Byte/Word typical

– 4 Words/8 Bytes Program

■ 135 memory blocks

– 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location)

– 127 Main Blocks, 64 KBytes each

■ Program/Erase Controller

– Embedded Byte/Word Program algorithms

■ Program/Erase Suspend and Resume

– Read from any Block during Program Suspend

– Read and Program another Block during Erase Suspend

■ Unlock Bypass Program command

– Faster Production/Batch Programming

■ VPP/WP pin for Fast Program and Write Protect

■ Temporary Block Unprotection mode

■ Common Flash Interface

– 64-bit Security Code

■ Extended Memory Block

– Extra block used as security block or to store additional information

■ Low power consumption

– Standby and Automatic Standby

■ 100,000 Program/Erase cycles per block

产品属性

  • 产品编号:

    M29W640FT70ZA6F TR

  • 制造商:

    Micron Technology Inc.

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    64Mb(8M x 8,4M x 16)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    70ns

  • 电压 - 供电:

    2.7V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    48-TFBGA

  • 供应商器件封装:

    48-TFBGA(6x8)

  • 描述:

    IC FLASH 64MBIT PARALLEL 48TFBGA

供应商 型号 品牌 批号 封装 库存 备注 价格
ST/意法
22+
BGA
354000
询价
ST/意法
BGA
22+
10330
原装正品现货 可开增值税发票
询价
NUMONYX
2016+
FBGA
6528
只做进口原装现货!或订货,假一赔十!
询价
ST
BGA
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
ST/意法
22+
BGA
900
原装现货假一赔十
询价
MICRON
21+
BGA/TSOP
50000
特价来袭!美光一级代理入驻114电子网
询价
Micron
17+
6200
询价
Micron
22+
48TFBGA (6x8)
9000
原厂渠道,现货配单
询价
2020+
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
ST
16+
BGA
2500
进口原装现货/价格优势!
询价