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M29W640FT70ZA6E中文资料意法半导体数据手册PDF规格书
厂商型号 |
M29W640FT70ZA6E |
参数属性 | M29W640FT70ZA6E 封装/外壳为48-TFBGA;包装为托盘;类别为集成电路(IC) > 存储器;产品描述:IC FLASH 64MBIT PARALLEL 48TFBGA |
功能描述 | 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory |
文件大小 |
478.8 Kbytes |
页面数量 |
72 页 |
生产厂商 | STMicroelectronics |
企业简称 |
STMICROELECTRONICS【意法半导体】 |
中文名称 | 意法半导体(ST)集团官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-9-22 23:00:00 |
M29W640FT70ZA6E规格书详情
Summary description
The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in units of 256 KByte (generally groups of four 64 KByte blocks), to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Features summary
■ Supply Voltage
– VCC = 2.7V to 3.6V for Program, Erase, Read
– VPP =12 V for Fast Program (optional)
■ Asynchronous Random/Page Read
– Page Width: 4 Words
– Page Access: 25ns
– Random Access: 60ns, 70ns
■ Programming Time
– 10 µs per Byte/Word typical
– 4 Words/8 Bytes Program
■ 135 memory blocks
– 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location)
– 127 Main Blocks, 64 KBytes each
■ Program/Erase Controller
– Embedded Byte/Word Program algorithms
■ Program/Erase Suspend and Resume
– Read from any Block during Program Suspend
– Read and Program another Block during Erase Suspend
■ Unlock Bypass Program command
– Faster Production/Batch Programming
■ VPP/WP pin for Fast Program and Write Protect
■ Temporary Block Unprotection mode
■ Common Flash Interface
– 64-bit Security Code
■ Extended Memory Block
– Extra block used as security block or to store additional information
■ Low power consumption
– Standby and Automatic Standby
■ 100,000 Program/Erase cycles per block
产品属性
- 产品编号:
M29W640FT70ZA6E
- 制造商:
Micron Technology Inc.
- 类别:
集成电路(IC) > 存储器
- 包装:
托盘
- 存储器类型:
非易失
- 存储器格式:
闪存
- 技术:
FLASH - NOR
- 存储容量:
64Mb(8M x 8,4M x 16)
- 存储器接口:
并联
- 写周期时间 - 字,页:
70ns
- 电压 - 供电:
2.7V ~ 3.6V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
48-TFBGA
- 供应商器件封装:
48-TFBGA(6x8)
- 描述:
IC FLASH 64MBIT PARALLEL 48TFBGA
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
NA/ |
3330 |
原装现货,当天可交货,原型号开票 |
询价 | ||
Micron |
1844+ |
BGA |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
ST |
BGA |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
24+ |
BGA |
23000 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
ST |
22+23+ |
BGA |
16517 |
绝对原装正品全新进口深圳现货 |
询价 | ||
MICRON |
21+ |
BGA/TSOP |
50000 |
特价来袭!美光一级代理入驻114电子网 |
询价 | ||
Numonyx-ADIVISIONOFMICRO |
2022 |
ICFLASH64MBIT70NS48TFBGA |
5058 |
原厂原装正品,价格超越代理 |
询价 | ||
ST/意法 |
24+ |
BGA |
13000 |
原装,现货,正品,热卖 |
询价 | ||
ST |
22+ |
BGA |
8500 |
专业分销!只做原装现货价优一手货源 |
询价 | ||
Micron Technology Inc |
23+/24+ |
48-TFBGA |
8600 |
只供原装进口公司现货+可订货 |
询价 |