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M29W640FB70ZA6E中文资料PDF规格书

M29W640FB70ZA6E
厂商型号

M29W640FB70ZA6E

参数属性

M29W640FB70ZA6E 封装/外壳为48-TFBGA;包装为托盘;类别为集成电路(IC) > 存储器;产品描述:IC FLASH 64MBIT PARALLEL 48TFBGA

功能描述

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

文件大小

478.8 Kbytes

页面数量

72

生产厂商 STMicroelectronics
企业简称

STMICROELECTRONICS意法半导体

中文名称

意法半导体(ST)集团官网

原厂标识
数据手册

下载地址一下载地址二原厂数据手册到原厂下载

更新时间

2024-6-21 23:00:00

M29W640FB70ZA6E规格书详情

Summary description

The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in units of 256 KByte (generally groups of four 64 KByte blocks), to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Features summary

■ Supply Voltage

– VCC = 2.7V to 3.6V for Program, Erase, Read

– VPP =12 V for Fast Program (optional)

■ Asynchronous Random/Page Read

– Page Width: 4 Words

– Page Access: 25ns

– Random Access: 60ns, 70ns

■ Programming Time

– 10 µs per Byte/Word typical

– 4 Words/8 Bytes Program

■ 135 memory blocks

– 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location)

– 127 Main Blocks, 64 KBytes each

■ Program/Erase Controller

– Embedded Byte/Word Program algorithms

■ Program/Erase Suspend and Resume

– Read from any Block during Program Suspend

– Read and Program another Block during Erase Suspend

■ Unlock Bypass Program command

– Faster Production/Batch Programming

■ VPP/WP pin for Fast Program and Write Protect

■ Temporary Block Unprotection mode

■ Common Flash Interface

– 64-bit Security Code

■ Extended Memory Block

– Extra block used as security block or to store additional information

■ Low power consumption

– Standby and Automatic Standby

■ 100,000 Program/Erase cycles per block

产品属性

  • 产品编号:

    M29W640FB70ZA6E

  • 制造商:

    Micron Technology Inc.

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    64Mb(8M x 8,4M x 16)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    70ns

  • 电压 - 供电:

    2.7V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    48-TFBGA

  • 供应商器件封装:

    48-TFBGA(6x8)

  • 描述:

    IC FLASH 64MBIT PARALLEL 48TFBGA

供应商 型号 品牌 批号 封装 库存 备注 价格
MICRON
BGA
2183
5846
原装现货 低价清仓 实单可谈
询价
MICRON
1722+
BGA48
437
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
MICRON/镁光
2022
BGA48
80000
原装现货,OEM渠道,欢迎咨询
询价
MICRON/镁光
24+23+
BGA48
12580
16年现货库存供应商终端BOM表可配单提供样品
询价
micron(镁光)
TFBGA-48(6x8)
1122
询价
ST(意法)
22+
BGA-100
6800
询价
MICRON
22+
BGA48
7435
全新原装正品 现货 优势供应
询价
Micron/Micron Technology Inc./
21+
BGA48
3179
优势代理渠道,原装正品,可全系列订货开增值税票
询价
MICRON
1844+
BGA
9852
只做原装正品假一赔十为客户做到零风险!!
询价
MICRON
BGA48
6869
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价