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M29F040B55N3T中文资料意法半导体数据手册PDF规格书

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厂商型号

M29F040B55N3T

功能描述

4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory

文件大小

190.45 Kbytes

页面数量

21

生产厂商

STMICROELECTRONICS

中文名称

意法半导体

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-10-11 15:40:00

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M29F040B55N3T价格和库存,欢迎联系客服免费人工找货

M29F040B55N3T规格书详情

SUMMARY DESCRIPTION

The M29F040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed us ing a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F040B is fully backward compatible with the M29F040.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.

They allow simple connection to most microprocessors, often without additional logic.

The memory is offered in TSOP32 (8 x 20mm), PLCC32 and PDIP32 packages and it is supplied with all the bits erased (set to ‘1’).

■ SINGLE 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45ns

■ PROGRAMMING TIME

– 8 µs per Byte typical

■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E2h

产品属性

  • 型号:

    M29F040B55N3T

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    4 Mbit(512Kb x8, Uniform Block) Single Supply Flash Memory

供应商 型号 品牌 批号 封装 库存 备注 价格
STM
07+
PLCC32
6000
绝对原装自己现货
询价
ST
24+
PLCC32
30617
ST一级地代理商原装进口现货
询价
SST
原厂封装
9800
原装进口公司现货假一赔百
询价
ST
23+
PLCC
5000
原装正品,假一罚十
询价
M29F040B70K1
1010
1010
询价
ST
04+
PLCC/32
1021
原装现货海量库存欢迎咨询
询价
NUM
24+
3432
询价
Micron Technology Inc.
24+
32-PLCC(11.35x13.89)
56200
一级代理/放心采购
询价
ST/意法
22+
PLCC32
3000
原装正品,支持实单
询价
ST
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价