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M29F040B45N6T中文资料意法半导体数据手册PDF规格书

M29F040B45N6T
厂商型号

M29F040B45N6T

功能描述

4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory

文件大小

190.45 Kbytes

页面数量

21

生产厂商 STMicroelectronics
企业简称

STMICROELECTRONICS意法半导体

中文名称

意法半导体集团官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-6-11 15:27:00

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M29F040B45N6T规格书详情

SUMMARY DESCRIPTION

The M29F040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed us ing a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F040B is fully backward compatible with the M29F040.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.

They allow simple connection to most microprocessors, often without additional logic.

The memory is offered in TSOP32 (8 x 20mm), PLCC32 and PDIP32 packages and it is supplied with all the bits erased (set to ‘1’).

■ SINGLE 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45ns

■ PROGRAMMING TIME

– 8 µs per Byte typical

■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E2h

产品属性

  • 型号:

    M29F040B45N6T

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    4 Mbit(512Kb x8, Uniform Block) Single Supply Flash Memory

供应商 型号 品牌 批号 封装 库存 备注 价格
ST
24+
9850
公司原装现货/随时可以发货
询价
ST/意法
24+
PLCC
25500
授权代理直销,原厂原装现货,假一罚十,特价销售
询价
ST/意法
24+
PLCC
9600
原装现货,优势供应,支持实单!
询价
ST/意法
22+
PLCC-32
3000
原装正品,支持实单
询价
ST
23+
PLCC-44
9526
询价
ST
24+
PLCC
2789
原装优势!绝对公司现货!
询价
ST
2447
PLCC
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ST/意法
22+
PLCC
18000
只做全新原装,支持BOM配单,假一罚十
询价
ST
25+23+
PLCC32
23470
绝对原装正品现货,全新深圳原装进口现货
询价
ST
2023+
3000
进口原装现货
询价