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M29F040B集成电路(IC)的存储器规格书PDF中文资料

M29F040B
厂商型号

M29F040B

参数属性

M29F040B 封装/外壳为32-LCC(J 形引线);包装为托盘;类别为集成电路(IC)的存储器;产品描述:IC FLASH 4MBIT PARALLEL 32PLCC

功能描述

4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory

封装外壳

32-LCC(J 形引线)

文件大小

178.82 Kbytes

页面数量

21

生产厂商 STMicroelectronics
企业简称

STMICROELECTRONICS意法半导体

中文名称

意法半导体集团官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-6-27 10:51:00

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M29F040B规格书详情

SUMMARY DESCRIPTION

The M29F040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed us ing a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F040B is fully backward compatible with the M29F040.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.

They allow simple connection to most microprocessors, often without additional logic.

The memory is offered in TSOP32 (8 x 20mm), PLCC32 and PDIP32 packages and it is supplied with all the bits erased (set to ‘1’).

■ SINGLE 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45ns

■ PROGRAMMING TIME

– 8 µs per Byte typical

■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E2h

产品属性

  • 产品编号:

    M29F040B45K6E

  • 制造商:

    Micron Technology Inc.

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    4Mb(512K x 8)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    45ns

  • 电压 - 供电:

    4.5V ~ 5.5V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    32-LCC(J 形引线)

  • 供应商器件封装:

    32-PLCC(11.35x13.89)

  • 描述:

    IC FLASH 4MBIT PARALLEL 32PLCC

供应商 型号 品牌 批号 封装 库存 备注 价格
AMD
23+
PLCC
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绝对全新原装!现货!特价!请放心订购!
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授权代理直销,原厂原装现货,假一罚十,特价销售
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只做全新原装真实现货供应
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ST
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全新原装现货,可出样品,可开增值税发票
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23+
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受权代理!全新原装现货特价热卖!
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NA
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专做原装正品,假一罚百!
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全现原装公司现货
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