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M29DW128F70NF6E

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29DW128F70NF6E

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29DW128F70NF6E

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

NUMONYXNUMONYX

恒忆

M29DW128F70NF6E

包装:管件 封装/外壳:56-TFSOP(0.724",18.40mm 宽) 类别:集成电路(IC) 存储器 描述:IC FLASH 128MBIT PARALLEL 56TSOP

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

M29DW128F70NF6

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29DW128F70NF6

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29DW128F70NF6

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

NUMONYXNUMONYX

恒忆

M29DW128F70NF6F

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

NUMONYXNUMONYX

恒忆

M29DW128F70NF6F

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29DW128F70NF6F

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29DW128F70NF6T

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29DW128F70NF6T

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29DW128F70NF6T

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

NUMONYXNUMONYX

恒忆

产品属性

  • 产品编号:

    M29DW128F70NF6E

  • 制造商:

    Micron Technology Inc.

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    管件

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    128Mb(16M x 8,8M x 16)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    70ns

  • 电压 - 供电:

    2.7V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    56-TFSOP(0.724",18.40mm 宽)

  • 供应商器件封装:

    56-TSOP

  • 描述:

    IC FLASH 128MBIT PARALLEL 56TSOP

供应商型号品牌批号封装库存备注价格
Numonyx-ADIVISIONOFMICRO
2022
ICFLASH128MBIT70NS56TSOP
5058
原厂原装正品,价格超越代理
询价
MicronTechnologyInc.
19+
56-TSOP(14x20)
56800
只卖原装正品!价格超越代理!可开增值税发票!
询价
Numonyx
22+
TSOP-48
2960
诚信交易大量库存现货
询价
Numonyx
20+
TSOP-48
2960
诚信交易大量库存现货
询价
ST/意法
2048+
TSOP56
9851
只做原装正品现货!或订货假一赔十!
询价
Micron Technology Inc.
21+
56-TSOP(14x20)
56200
一级代理/放心采购
询价
ST
06+
TSOP
150
优势
询价
NUYX
23+
56TSOP
28500
授权代理直销,原厂原装现货,假一罚十,特价销售
询价
ST
2021+
TSOP56
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MICRON
20+
TSOP-56
1001
就找我吧!--邀您体验愉快问购元件!
询价
更多M29DW128F70NF6E供应商 更新时间2024-5-4 16:18:00