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M29DW128F70NF6

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

文件:719.73 Kbytes 页数:93 Pages

STMICROELECTRONICS

意法半导体

M29DW128F70NF6

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes 页数:94 Pages

NUMONYX

M29DW128F70NF6

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes 页数:94 Pages

STMICROELECTRONICS

意法半导体

M29DW128F70NF6E

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

文件:719.73 Kbytes 页数:93 Pages

STMICROELECTRONICS

意法半导体

M29DW128F70NF6F

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

文件:719.73 Kbytes 页数:93 Pages

STMICROELECTRONICS

意法半导体

M29DW128F70NF6T

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

文件:719.73 Kbytes 页数:93 Pages

STMICROELECTRONICS

意法半导体

M29DW128F70NF6E

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes 页数:94 Pages

STMICROELECTRONICS

意法半导体

M29DW128F70NF6E

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes 页数:94 Pages

NUMONYX

M29DW128F70NF6F

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes 页数:94 Pages

NUMONYX

M29DW128F70NF6F

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes 页数:94 Pages

STMICROELECTRONICS

意法半导体

详细参数

  • 型号:

    M29DW128F70NF6

  • 制造商:

    NUMONYX

  • 制造商全称:

    Numonyx B.V

  • 功能描述:

    128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

供应商型号品牌批号封装库存备注价格
ST
20+
TSOP
2960
诚信交易大量库存现货
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ST
23+
SMD
8560
受权代理!全新原装现货特价热卖!
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ST
2025+
TSOP
3785
全新原厂原装产品、公司现货销售
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Micron Technology Inc.
24+
56-TSOP(14x20)
56200
一级代理/放心采购
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ST
06+
TSOP
150
优势
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ST
2447
TSOP56
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MICRON
25+
TSOP-56
1001
就找我吧!--邀您体验愉快问购元件!
询价
Micron
22+
56TSOP (14x20)
9000
原厂渠道,现货配单
询价
Micron
23+
56-TSOP (14x20)
36500
原装正品现货库存QQ:2987726803
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MAXIC
23+24
N.SO
27960
原装现货.优势热卖.终端BOM表可配单
询价
更多M29DW128F70NF6供应商 更新时间2025-12-12 16:15:00