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型号	下载订购	功能描述	制造商上传企业	LOGO
M28F256-12XB3TR	文件：523.409 Kbytes Page：20 Pages	512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int 文件：523.409 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-12XB3TR	文件：715.28 Kbytes Page：20 Pages	256K(32K x8, Chip Erase)FLASH MEMORY 文件：715.28 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-12XB6TR	文件：715.28 Kbytes Page：20 Pages	256K(32K x8, Chip Erase)FLASH MEMORY 文件：715.28 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-12XB6TR	文件：523.409 Kbytes Page：20 Pages	512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int 文件：523.409 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-12XC1TR	文件：523.409 Kbytes Page：20 Pages	512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int 文件：523.409 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-12XC1TR	文件：715.28 Kbytes Page：20 Pages	256K(32K x8, Chip Erase)FLASH MEMORY 文件：715.28 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-12XC3TR	文件：715.28 Kbytes Page：20 Pages	256K(32K x8, Chip Erase)FLASH MEMORY 文件：715.28 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-12XC3TR	文件：523.409 Kbytes Page：20 Pages	512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int 文件：523.409 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-12XC6TR	文件：715.28 Kbytes Page：20 Pages	256K(32K x8, Chip Erase)FLASH MEMORY 文件：715.28 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-12XC6TR	文件：523.409 Kbytes Page：20 Pages	512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int 文件：523.409 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

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详细参数

型号：
M28F256
制造商：
STMICROELECTRONICS
制造商全称：
STMicroelectronics
功能描述：
256K(32K x8, Chip Erase)FLASH MEMORY

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市佳鑫美电子科技有限公司	M28F256	ST	25+	DIP32	3629	原装优势!房间现货!欢迎来电!	询价
深圳市赛特兴科技有限公司	M28F256	ST	23+	PLCC32	16900	正规渠道,只有原装!	询价
深圳市腾亿芯科技有限公司	M28F256	ST	25+	PLCC32	16900	原装，请咨询	询价
深圳市中飞凌科技有限公司	M28F256	ST	26+	PLCC32	60000	只有原装可配单	询价
深圳市福田区绿盛电子商行	M28F256-120	ST	2015+	DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市弘为电子有限公司	M28F256-15C1	ST	24+	PLCC	1099	原装现货假一罚十	询价
谛辉(北京/上海/青岛 )电子科技有限公司	M28F256-120	ST	25+	标准封装	18000	原厂直接发货进口原装	询价
芯有半导体（深圳）有限公司	M28F256-20C1	SGS	05+	原厂原装	4301	只做全新原装真实现货供应	询价
深圳市一线半导体有限公司	M28F256-90C1	ST	24+	粒	10000	自己现货	询价
深圳市恒创达实业有限公司	M28F256-15BI	ST	17+	DIP	6200	100%原装正品现货	询价

更多M28F256供应商更新时间2026-1-27 14:13:00

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