4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

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STMICROELECTRONICS

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4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

文件：863.9 Kbytes 页数：48 Pages

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Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C are available as Known Good Dice. STMicroelectronics defines Known Good Dice as standard products offered as dice and tested for functionality and speed. STs Known Good Die products are as reliable and of the same quality as products delivered in packages. FEATU

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4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

文件：863.9 Kbytes 页数：48 Pages

STMICROELECTRONICS

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4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

文件：863.9 Kbytes 页数：48 Pages

STMICROELECTRONICS

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4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

文件：863.9 Kbytes 页数：48 Pages

STMICROELECTRONICS

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4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

文件：863.9 Kbytes 页数：48 Pages

STMICROELECTRONICS

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4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

文件：863.9 Kbytes 页数：48 Pages

STMICROELECTRONICS

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4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

文件：863.9 Kbytes 页数：48 Pages

STMICROELECTRONICS

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4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

文件：863.9 Kbytes 页数：48 Pages

STMICROELECTRONICS

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