丝印：LX573；Package：TSSOP；3.3-V ABT OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS

State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low Static Power Dissipation Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 3.3-V VCC) Support Unregulated Battery Operation Down to 2.7 V Typical VOLP (Output Ground Bounce)

文件：682.64 Kbytes 页数：17 Pages

TI

德州仪器

丝印：LX573；Package：TSSOP；3.3-V ABT OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS

State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low Static Power Dissipation Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 3.3-V VCC) Support Unregulated Battery Operation Down to 2.7 V Typical VOLP (Output Ground Bounce)

文件：682.64 Kbytes 页数：17 Pages

TI

德州仪器

Schottky Barrier Rectifier

Description: The NTE573 is an axial lead metal–to–silicon power diode using the Schottky Barrier principle. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. This device is ideally suited for use in low–voltage, high–frequency inverters, a

文件：18.88 Kbytes 页数：2 Pages

NTE

Silicon Phototransistor

文件：342.28 Kbytes 页数：4 Pages

OPTEK

Silicon Phototransistor

文件：874 Kbytes 页数：4 Pages

TTELEC