丝印：LVTZ244；Package：SOIC；3.3-V ABT OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low-Static Power Dissipation High-Impedance State During Power Up and Power Down Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 3.3-V VCC) Support Unregulated Battery Operation Down t

文件：839.06 Kbytes 页数：21 Pages

TI

德州仪器

丝印：LVTZ244；Package：SOIC；3.3-V ABT OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low-Static Power Dissipation High-Impedance State During Power Up and Power Down Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 3.3-V VCC) Support Unregulated Battery Operation Down t

文件：839.06 Kbytes 页数：21 Pages

TI

德州仪器

丝印：LVTZ244；Package：SOIC；3.3-V ABT OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low-Static Power Dissipation High-Impedance State During Power Up and Power Down Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 3.3-V VCC) Support Unregulated Battery Operation Down t

文件：839.06 Kbytes 页数：21 Pages

TI

德州仪器

丝印：LVTZ244；Package：SOIC；3.3-V ABT OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low-Static Power Dissipation High-Impedance State During Power Up and Power Down Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 3.3-V VCC) Support Unregulated Battery Operation Down t

文件：839.06 Kbytes 页数：21 Pages

TI

德州仪器