丝印：LW；Package：SOT23；60 V, 360 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • AEC

文件：283.93 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：LW；Package：SOT-416；NPN 500mA 30V General purpose transistors

Features 1)General purpose. 2)Complementary PNP types : 　2SAR502E3, 2SAR502U3 3)Collector current is large. 4)Low VCE(sat). Application LOW FREQUENCY AMPLIFIER

文件：2.51114 Mbytes 页数：10 Pages

ROHM

罗姆

丝印：LW；Package：SOT-416；NPN 500mA 30V General purpose transistors

Features 1)General purpose. 2)Complementary PNP types : 　2SAR502E3 HZG (EMT3) 3)Collector current is large. 4)Low VCE(sat). Application LOW FREQUENCY AMPLIFIER

文件：1.7151 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：LW；Package：SOT-323；NPN 500mA 30V General purpose transistors

Features 1)General purpose. 2)Complementary PNP types : 　2SAR502E3, 2SAR502U3 3)Collector current is large. 4)Low VCE(sat). Application LOW FREQUENCY AMPLIFIER

文件：2.51114 Mbytes 页数：10 Pages

ROHM

罗姆

丝印：LW；Package：CFP3；4.1 W high power voltage regulator diodes

1. General description High power voltage regulator diodes in a CFP3 (SOD123W) small and flat lead low-profile Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 4.1 W @ Tsp = 75 °C, measured zero lead length • Tolerance series: Approximatel

文件：212.58 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：LW；Package：CFP3；5.5 W high power voltage regulator diodes

1. General description High power voltage regulator diodes in a CFP3 (SOD123W) small and flat lead low-profile Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤5.5 W @ Tsp = 75 °C, measured zero lead length • Tolerance series: Approximately

文件：213.43 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：LW；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：1.00428 Mbytes 页数：4 Pages

SUNMATE

森美特

丝印：LW；Package：SMB；600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Glass Passivated Die Construction 600W Peak Pulse Power Dissipation 5.0V – 440V Standoff Voltage Uni- and Bi-Directional Versions Available Excellent Clamping Voltage Typical Response Time

文件：111.2 Kbytes 页数：6 Pages

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

丝印：LW；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：1.04322 Mbytes 页数：4 Pages

SUNMATE

森美特

丝印：LW；Package：DO-214AA；3.3 To 440V 600W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 1μA above 10V 600W Peak power capability at 10 × 1000μs waveform Repetition rate

文件：4.79545 Mbytes 页数：8 Pages

UNSEMI

优恩半导体