丝印：LTC7893；Package：QFN；100V Low IQ, Synchronous Boost Controller for GaN FETs

FEATURES  GaN Drive Technology Fully Optimized for GaN FETs  Output Voltage Up to 100V  Wide VIN Range: 4V to 60V and Operates Down to 1V after Start-Up  No Catch, Clamp, or Bootstrap Diodes Needed  Internal Smart Bootstrap Switches Prevent Overcharging of High-Side Driver Supply  Re

文件：1.44961 Mbytes 页数：48 Pages

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丝印：LTC7893；Package：QFN；100V Low IQ, Synchronous Boost Controller for GaN FETs

FEATURES  GaN Drive Technology Fully Optimized for GaN FETs  Output Voltage Up to 100V  Wide VIN Range: 4V to 60V and Operates Down to 1V after Start-Up  No Catch, Clamp, or Bootstrap Diodes Needed  Internal Smart Bootstrap Switches Prevent Overcharging of High-Side Driver Supply  Re

文件：1.44961 Mbytes 页数：48 Pages

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丝印：LTC7893；Package：QFN；100V Low IQ, Synchronous Boost Controller for GaN FETs

FEATURES  GaN Drive Technology Fully Optimized for GaN FETs  Output Voltage Up to 100V  Wide VIN Range: 4V to 60V and Operates Down to 1V after Start-Up  No Catch, Clamp, or Bootstrap Diodes Needed  Internal Smart Bootstrap Switches Prevent Overcharging of High-Side Driver Supply  Re

文件：1.44961 Mbytes 页数：48 Pages

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丝印：LTC7893；Package：QFN；100V Low IQ, Synchronous Boost Controller for GaN FETs

FEATURES  GaN Drive Technology Fully Optimized for GaN FETs  Output Voltage Up to 100V  Wide VIN Range: 4V to 60V and Operates Down to 1V after Start-Up  No Catch, Clamp, or Bootstrap Diodes Needed  Internal Smart Bootstrap Switches Prevent Overcharging of High-Side Driver Supply  Re

文件：1.44961 Mbytes 页数：48 Pages

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丝印：LTC7893；Package：QFN；100V Low IQ, Synchronous Boost Controller for GaN FETs

FEATURES  GaN Drive Technology Fully Optimized for GaN FETs  Output Voltage Up to 100V  Wide VIN Range: 4V to 60V and Operates Down to 1V after Start-Up  No Catch, Clamp, or Bootstrap Diodes Needed  Internal Smart Bootstrap Switches Prevent Overcharging of High-Side Driver Supply  Re

文件：1.44961 Mbytes 页数：48 Pages

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亚德诺

丝印：LTC7893；Package：QFN；100V Low IQ, Synchronous Boost Controller for GaN FETs

FEATURES  GaN Drive Technology Fully Optimized for GaN FETs  Output Voltage Up to 100V  Wide VIN Range: 4V to 60V and Operates Down to 1V after Start-Up  No Catch, Clamp, or Bootstrap Diodes Needed  Internal Smart Bootstrap Switches Prevent Overcharging of High-Side Driver Supply  Re

文件：1.44961 Mbytes 页数：48 Pages

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亚德诺

丝印：LTC7893；Package：QFN；100V Low IQ, Synchronous Boost Controller for GaN FETs

FEATURES  GaN Drive Technology Fully Optimized for GaN FETs  Output Voltage Up to 100V  Wide VIN Range: 4V to 60V and Operates Down to 1V after Start-Up  No Catch, Clamp, or Bootstrap Diodes Needed  Internal Smart Bootstrap Switches Prevent Overcharging of High-Side Driver Supply  Re

文件：1.44961 Mbytes 页数：48 Pages

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亚德诺

丝印：LTC7893；Package：QFN；100V Low IQ, Synchronous Boost Controller for GaN FETs

FEATURES  GaN Drive Technology Fully Optimized for GaN FETs  Output Voltage Up to 100V  Wide VIN Range: 4V to 60V and Operates Down to 1V after Start-Up  No Catch, Clamp, or Bootstrap Diodes Needed  Internal Smart Bootstrap Switches Prevent Overcharging of High-Side Driver Supply  Re

文件：1.44961 Mbytes 页数：48 Pages

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亚德诺

100V Low IQ, Synchronous Boost Controller for GaN FETs

FEATURES  GaN Drive Technology Fully Optimized for GaN FETs  Output Voltage Up to 100V  Wide VIN Range: 4V to 60V and Operates Down to 1V after Start-Up  No Catch, Clamp, or Bootstrap Diodes Needed  Internal Smart Bootstrap Switches Prevent Overcharging of High-Side Driver Supply  Re

文件：1.44961 Mbytes 页数：48 Pages

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Low IQ, Dual, 2-Phase Synchronous Boost Controller for GaN FETs

FEATURES  GaN Drive Technology fully Optimized for GaN FETs  Output Voltage up to 100V  Wide VIN Range: 4V to 60V and Operates Down to 1V After Start-Up  No Catch, Clamp, or Bootstrap Diodes Needed  Internal Smart Bootstrap Switches Prevent Overcharging of High-Side Driver Supplies 

文件：1.0159 Mbytes 页数：50 Pages

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