LTC7893AUFDMWTRPBF中文资料亚德诺数据手册PDF规格书

FEATURES

 GaN Drive Technology Fully Optimized for GaN FETs

 Output Voltage Up to 100V

 Wide VIN Range: 4V to 60V and Operates Down to 1V

after Start-Up

 No Catch, Clamp, or Bootstrap Diodes Needed

 Internal Smart Bootstrap Switches Prevent

Overcharging of High-Side Driver Supply

 Resistor-Adjustable Dead Times

 Split-Output Gate Drivers for Adjustable Turn On

and Turn Off Driver Strengths

 Accurate Adjustable Driver Voltage and UVLO

 Low Operating IQ: 15μA

 Programmable Frequency (100kHz to 3MHz)

 Synchronizable Frequency (100kHz to 3MHz)

 Spread Spectrum Frequency Modulation

 28-Lead (4mm × 5mm), Side Wettable, QFN Package

 AEC-Q100 Qualified for Automotive Applications

APPLICATIONS

 Automotive and Industrial Power Systems

 Military Avionics and Medical Systems

 Telecommunications Power Systems