T2N7002BK

High-SpeedSwitching

Features (1)ESD(HBM)level2kV (2)Lowdrain-sourceon-resistance :RDS(ON)=1.05Ω(typ.)(@VGS=10V) RDS(ON)=1.15Ω(typ.)(@VGS=5.0V) RDS(ON)=1.2Ω(typ.)(@VGS=4.5V) Applications •High-SpeedSwitching

TQM2N7002KCU

SmallSignalN-ChannelMOSFET

FEATURES AEC-Q101Qualified Advancedtrenchcelldesign ESDprotectedG-S2kV(HBM) RoHSCompliant Halogen-free APPLICATIONS Switchingcircuits High-speedlinedriver Low-sideloadswitch Relaydriver

TQM2N7002KCX

SmallSignalN-ChannelMOSFET

FEATURES AEC-Q101Qualified Advancedtrenchcelldesign ESDprotectedG-S2kV(HBM) RoHSCompliant Halogen-free APPLICATIONS Switchingcircuits High-speedlinedriver Low-sideloadswitch Relaydriver

TSM2N7002

500VN-ChannelPowerMOSFET

TSM2N7002

60VN-ChannelEnhancementModeMOSFET

TSM2N7002AKCU

N-ChannelPowerMOSFET

FEATURES ●LowRDS(ON)tominimizeconductivelosses ●Logiclevel ●Lowgatechargeforfastpowerswitching ●ESDProtected2.5KV(HBM) ●RoHSCompliant ●Halogen-freeaccordingtoIEC61249-2-21 APPLICATIONS ●LowSideLoadSwitching ●LevelShiftCircuits ●GeneralSwitchCircuits

TSM2N7002AKCX

N-ChannelPowerMOSFET

FEATURES ●LowRDS(ON)tominimizeconductivelosses ●Logiclevel ●Lowgatechargeforfastpowerswitching ●ESDProtected2KV(HBM) ●RoHSCompliant ●Halogen-freeaccordingtoIEC61249-2-21 APPLICATIONS ●LowSideLoadSwitching ●LevelShiftCircuits ●GeneralSwitchCircuits

TSM2N7002CX

60VN-ChannelEnhancementModeMOSFET

TSM2N7002E

50VN-ChannelEnhancementModeMOSFET

TSM2N7002E

60VN-ChannelMOSFET