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MDF11N65B

N-ChannelMOSFET650V,12A,0.65(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat

MGCHIP

MagnaChip Semiconductor.

MDF11N65B

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

MDF11N65BTH

N-ChannelMOSFET650V,12A,0.65(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat

MGCHIP

MagnaChip Semiconductor.

MDF11N65BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MDFS11N65B

N-ChannelMOSFET650V,12A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDFS11N65BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MDFS11N65BTH

N-ChannelMOSFET650V,12A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

NCE11N65

SuperJunctionMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE11N65F

SuperJunctionMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

P11N65ZA

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

PSM11N65CT

11A650VSingleN?륝hannelPowerMOSFET

PFC

PFC Device Inc.

PSM11N65CTF

11A650VSingleN-ChannelPowerMOSFET

PFC

PFC Device Inc.

SIHH11N65E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SIHH11N65E

ESeriesPowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Kelvinconnectionforreducedgatenoise •Materialcategorization:fordefinitionsofcompliance pleasesee

VishayVishay Siliconix

威世科技威世科技半导体

SIHH11N65EF

ESeriesPowerMOSFETwithFastBodyDiode

FEATURES •Completelylead(Pb)-freedevice •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Kelvinconnectionforreducedgatenoise •Materialcategorization:forde

VishayVishay Siliconix

威世科技威世科技半导体

SIHH11N65EF

ESeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半导体

SVSP11N65D

11A,650VSUPERJUNCTIONMOSPOWERTRANSISTOR

DESCRIPTION SVSP11N65D/F/S/FJD/K/TD2isanN-channelenhancementmode highvoltagepowerMOSFETsproducedusingSilan’ssuperjunction MOStechnology.Itachieveslowconductionlossandswitching losses.Itleadsthedesignengineerstotheirpowerconverterswith highefficiency,highpower

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SW11N65D

N-channelEnhancedmodeTO-220/TO-220F/TO-262MOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

供应商型号品牌批号封装库存备注价格
LONTEN
23+
TO-251
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
帅福得
2022+
原厂原包装
6800
全新原装 支持表配单 中国著名电子元器件独立分销
询价
mot
22+
500000
行业低价,代理渠道
询价
Honeywell
29
全新原装 货期两周
询价
Honeywell
2022+
25
全新原装 货期两周
询价
HONEYWELL
20+
开关元件
96
就找我吧!--邀您体验愉快问购元件!
询价
SAFT
13+
QFN
18126
原装分销
询价
SAFT
2018+
LSH20
36000
进口原装现货假一赔十
询价
SAFT
1844+
LSH20
9852
只做原装正品假一赔十为客户做到零风险!!
询价
SAFT
20+
LSH20
15006
传感器全新原装主营-可开原型号增税票
询价
更多LSH11N65F供应商 更新时间2024-9-26 15:25:00