零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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N-ChannelMOSFET650V,12A,0.65(ohm) GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-ChannelMOSFET650V,12A,0.65(ohm) GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET650V,12A,0.65(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET650V,12A,0.65(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
SuperJunctionMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
SuperJunctionMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
11A650VSingleN?륝hannelPowerMOSFET | PFC PFC Device Inc. | PFC | ||
11A650VSingleN-ChannelPowerMOSFET | PFC PFC Device Inc. | PFC | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Kelvinconnectionforreducedgatenoise •Materialcategorization:fordefinitionsofcompliance pleasesee | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
ESeriesPowerMOSFETwithFastBodyDiode FEATURES •Completelylead(Pb)-freedevice •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Kelvinconnectionforreducedgatenoise •Materialcategorization:forde | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
ESeriesPowerMOSFETwithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
11A,650VSUPERJUNCTIONMOSPOWERTRANSISTOR DESCRIPTION SVSP11N65D/F/S/FJD/K/TD2isanN-channelenhancementmode highvoltagepowerMOSFETsproducedusingSilan’ssuperjunction MOStechnology.Itachieveslowconductionlossandswitching losses.Itleadsthedesignengineerstotheirpowerconverterswith highefficiency,highpower | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
N-channelEnhancedmodeTO-220/TO-220F/TO-262MOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
LONTEN |
23+ |
TO-251 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
帅福得 |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
mot |
22+ |
500000 |
行业低价,代理渠道 |
询价 | |||
Honeywell |
新 |
29 |
全新原装 货期两周 |
询价 | |||
Honeywell |
2022+ |
25 |
全新原装 货期两周 |
询价 | |||
HONEYWELL |
20+ |
开关元件 |
96 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
SAFT |
13+ |
QFN |
18126 |
原装分销 |
询价 | ||
SAFT |
2018+ |
LSH20 |
36000 |
进口原装现货假一赔十 |
询价 | ||
SAFT |
1844+ |
LSH20 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
SAFT |
20+ |
LSH20 |
15006 |
传感器全新原装主营-可开原型号增税票 |
询价 |
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