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MME60R290P

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MME60R290PRH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MME60R290PRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MME60R290QRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13.8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MME60R290QRH

600V0.29ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R290P

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R290PTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R290PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMFT60R290P

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMFT60R290PC

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMFT60R290PCTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMFT60R290PCTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMFT60R290PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMFT60R290PTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP60R290P

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP60R290PC

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP60R290PCTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP60R290PCTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMP60R290PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMP60R290PTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

供应商型号品牌批号封装库存备注价格
LONTEN(龙腾半导体)
2112+
TO-252
105000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
LONTEN龙腾半导体
23+
TO-252
22820
原装正品,支持实单
询价
LONTEN(龙腾半导体)
23+
TO252
6000
诚信服务,绝对原装原盘
询价
23+
N/A
67000
一级代理放心采购
询价
LONTEN
22+
TO-252
10000
原厂原装,价格优势!13246658303
询价
龙腾半导体
23+
TO-252
4500
专营国产功率器件
询价
LONTEN
TO-252
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多LSG60R290HF供应商 更新时间2024-6-17 15:03:00