首页 >LSD10015-XX>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNSILICONPOWERDARLINGTONTRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
NPNSILICONPOWERDARLINGTONTRANSISTORS SWITCHMODESeriesNPNSiliconPowerDarlingtonTransistorswithBase-EmitterSpeedupDiode TheMJ10015andMJ10016Darlingtontransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforline–operatedsw | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
50AMPERENPNSILICONPOWERDARLINGTONTRANSISTORS400AND500VOLTS250WATTS SWITCHMODESeriesNPNSiliconPowerDarlingtonTransistorswithBase-EmitterSpeedupDiode TheMJ10015andMJ10016Darlingtontransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforline–operatedsw | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
POWERTRANSISTORS(50A,400-500V,250W) SWITCHMODESERIESNPNSILICONPOWERDARLINGTONTRANSISTORSWITHBASE-EMITTERSPEEDUPDIODE TheMJ10015andMJ10016Darlingtontransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforline–operatedsw | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
ULTRAFASTRECTIFIERS ULTRAFASTSWITCHMODEPOWERRECTIFIER ...designedforuseinswitchingpowersupplies,inverters,andasfreewheelingdiodes.Thesestate-of-the-artdeviceshavethefollowingfeatures: ●DualDiodeConstruction ●LowLeakageCurrent ●LowForwardVoltage ●175°COperatingJunctionTemperatu | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
100WSingleOutputIndustrialDINRailPowerSupply | ALTECH Altech Corporation | ALTECH | ||
NPNDarlingtonTransistors NPNDarlingtonTransistorsTO-204MA(TO-3) | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
50Watts,300-960MHzGOLDMOSFieldEffectTransistor Description ThePTF10015isa50WattLDMOSFETintendedforlargesignalamplifierapplicationsfrom300to960MHz.Itoperatesat55efficiencyand13.0dBofgain.Nitridesurfacepassivationandfullgoldmetallizationareusedtoensureexcellentdevicelifetimeandreliability. Features | EricssonEricsson Microelectronics 爱立信爱立信公司 | Ericsson | ||
SchottkyBarrierDiode SchottkyBarrierDiode 15V,1A,LowIR,SingleMCPH3 Features •Smallswitchingnoise •Halogenfreecompliance •Lowleakagecurrentandhighreliabilityduetohighlyreliableplanarstructure •Ultrasmallpackagepermittingappliedsetstobesmallandslim(mountingheight0.85mm) Appl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
LowIRSchottkyBarrierDiode15V,1.0ARectifier 15V,1.0ARectifier Features •Smallswitchingnoise •Lowleakagecurrentandhighreliabilityduetohighlyreliableplanarstructure •Ultrasmallpackagepermittingappliedsetstobesmallandslim(mountingheight0.85mm) Applications •Highfrequencyrectification(switchingregulators | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO |
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