SiC Diode

Diodes

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LED Displays Numeric 7-segment

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ETCList of Unclassifed Manufacturers

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30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor

Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • INTERNALLY MATCHED • Guaranteed Pe

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Ericsson

爱立信

650 V, 10 A low VF power Schottky silicon carbide diode

Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK2 compliant component

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STMICROELECTRONICS

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