ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max.

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Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET

The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS830 features a 5-mV offset and 10-µV/°C drift. The 8 Pin

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MICROSS

JFET Amplifiers - Duals

Pin for Pin Replacements for Fairchild Motorola National Siliconix-Vishay.All Dual Devices are available in PDIP TO-71 TO-5 SOIC-8 SOT23-6 Tested Die All Devices are available with special testing to customer specification.

Linear systems

Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET

The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS830 features a 5-mV offset and 10-µV/°C drift. The 8 Pin

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MICROSS

MONOLITHIC DUAL NPN TRANSISTOR

The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS830 features a 5-mV offset and 10-µV/°C drift. The 8 Pin

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MICROSS

MONOLITHIC DUAL NPN TRANSISTOR

The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS830 features a 5-mV offset and 10-µV/°C drift. The 8 Pin

文件：285.63 Kbytes 页数：1 Pages

MICROSS

MONOLITHIC DUAL NPN TRANSISTOR

The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS830 features a 5-mV offset and 10-µV/°C drift. The 8 Pin

文件：285.63 Kbytes 页数：1 Pages

MICROSS

ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max.

文件：30.37 Kbytes 页数：2 Pages

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ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER

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ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

Linear systems