LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET

FEATURES • LOW NOISE en = 8nV/√Hz TYP. • LOW LEAKAGE IG = 10pA TYP. • LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. • LOW OFFSET VOLTAGE IVGS1-2I= 2mV TYP.

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LINEAR

Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET

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JFET Amplifiers - Duals

Pin for Pin Replacements for Fairchild Motorola National Siliconix-Vishay.All Dual Devices are available in PDIP TO-71 TO-5 SOIC-8 SOT23-6 Tested Die All Devices are available with special testing to customer specification.

Linear systems

MONOLITHIC DUAL N-CHANNEL JFET

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MICROSS

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MONOLITHIC DUAL N-CHANNEL JFET

文件：285.76 Kbytes 页数：1 Pages

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