D9LVRA2DEMR

Marking：LR2；Package：WSON；DS90LVRA2 LVDS Dual Differential Line Receiver

1Features •600Mbps(300MHz)switchingrates •50psdifferentialskew(typical) •0.1nschannel-to-channelskew(typical) •1.8Vpowersupply •Flow-throughpinout •PowerdownhighimpedanceonLVDSinputs •Outputslewratecontrol •LVDSinputsacceptLVDS/CML/LVPECLsignals •Co

D9LVRA2DEMT

Marking：LR2；Package：WSON；DS90LVRA2 LVDS Dual Differential Line Receiver

1Features •600Mbps(300MHz)switchingrates •50psdifferentialskew(typical) •0.1nschannel-to-channelskew(typical) •1.8Vpowersupply •Flow-throughpinout •PowerdownhighimpedanceonLVDSinputs •Outputslewratecontrol •LVDSinputsacceptLVDS/CML/LVPECLsignals •Co

D9LVRA2IDEMR

Marking：LR2；Package：WSON；DS90LVRA2 LVDS Dual Differential Line Receiver

1Features •600Mbps(300MHz)switchingrates •50psdifferentialskew(typical) •0.1nschannel-to-channelskew(typical) •1.8Vpowersupply •Flow-throughpinout •PowerdownhighimpedanceonLVDSinputs •Outputslewratecontrol •LVDSinputsacceptLVDS/CML/LVPECLsignals •Co

D9LVRA2IDEMT

Marking：LR2；Package：WSON；DS90LVRA2 LVDS Dual Differential Line Receiver

1Features •600Mbps(300MHz)switchingrates •50psdifferentialskew(typical) •0.1nschannel-to-channelskew(typical) •1.8Vpowersupply •Flow-throughpinout •PowerdownhighimpedanceonLVDSinputs •Outputslewratecontrol •LVDSinputsacceptLVDS/CML/LVPECLsignals •Co

D9LVRA2DEMRQ1

Marking：LR2Q；Package：WSON；DS90LVRA2-Q1 Automotive LVDS Dual Differential Line Receiver

1Features •AEC-Q100andAEC-Q006qualifiedforautomotive applications –Temperaturegrade2:−40°Cto+105°C •600Mbps(300MHz)switchingrates •50psdifferentialskew(typical) •0.1nschannel-to-channelskew(typical) •Supports1.8Vto3.3Vpowersupply •Flow-throughpinout •Powe

IRLR2705TRPBF-TP

Marking：LR2705；Package：TO-252-3L；N-Channel Enhancement Mode MOSFE

Features ®Vos=60Vlo=28A Rosny

IRLR2905TR

Marking：LR2905；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

GeneralDescription TheUMWIRLR2905TRusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTec

IRLR2905TR

Marking：LR2905；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

GeneralDescription TheIRLR2905TRusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnol