丝印：LQA；Package：DO-214AA；Transient Voltage Suppressors

600 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle):0.01 % Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time RoHS compliant Features Glass passivated chip High reliability application and automotive

文件：1.58939 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：LQA048；Package：LQFP48；32-bit Arm® Cortex®-M3 FM3 Microcontroller

Features 32-bit Arm® Cortex®-M3 Core ◼ Processor version: r2p1 ◼ Up to 72 MHz Frequency Operation ◼ Integrated Nested Vectored Interrupt Controller (NVIC): 1 NMI (non-maskable interrupt) and 48 peripheral interrupts and 16 priority levels ◼ 24-bit System timer (Sys Tick): System timer for OS

文件：3.77478 Mbytes 页数：110 Pages

INFINEON

英飞凌

丝印：LQA048；Package：LQFP48；32-bit Arm® Cortex®-M3 FM3 Microcontroller

Features 32-bit Arm® Cortex®-M3 Core ◼ Processor version: r2p1 ◼ Up to 72 MHz Frequency Operation ◼ Integrated Nested Vectored Interrupt Controller (NVIC): 1 NMI (non-maskable interrupt) and 48 peripheral interrupts and 16 priority levels ◼ 24-bit System timer (Sys Tick): System timer for OS

文件：3.77478 Mbytes 页数：110 Pages

INFINEON

英飞凌

丝印：LQA048；Package：LQFP48；32-bit Arm® Cortex®-M3 FM3 Microcontroller

Features 32-bit Arm® Cortex®-M3 Core ◼ Processor version: r2p1 ◼ Up to 72 MHz Frequency Operation ◼ Integrated Nested Vectored Interrupt Controller (NVIC): 1 NMI (non-maskable interrupt) and 48 peripheral interrupts and 16 priority levels ◼ 24-bit System timer (Sys Tick): System timer for OS

文件：3.77478 Mbytes 页数：110 Pages

INFINEON

英飞凌

600 V, 3 A Q-Series PFC Diode

General Description This device has the lowest QRR of any 600 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Features • Low QRR, Low IRRM, Low tRR • High dIF/dt capable (1000A/µs) • Soft recovery Applications • Power Factor Correction (

文件：197.15 Kbytes 页数：7 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

600 V, 3 A Q-Series PFC Diode

General Description This device has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications · Power Factor Correction (PFC) boost diode · Motor drive circuits · DC-AC inverters Features · Low QRR, low IR

文件：369.65 Kbytes 页数：7 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

600 V, 3 A Q-Series PFC Diode

General Description This device has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications · Power Factor Correction (PFC) boost diode · Motor drive circuits · DC-AC inverters Features · Low QRR, low IR

文件：369.65 Kbytes 页数：7 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

600 V, 5 A Q-Series PFC Diode

General Description This device has the lowest QRR of any 600 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Features • Low QRR, Low IRRM, Low tRR • High dIF/dt capable (1000A/µs) • Soft recovery Benefits • Increases efficiency • El

文件：133.13 Kbytes 页数：7 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

300 V, 6 A Q-Series Diode

General Description This device has the lowest QRR of any 300 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Features • Low QRR, Low IRRM, Low tRR • High dIF/dt capable (1000A/µs) • Soft recovery Benefits • Increases efficiency • El

文件：120.77 Kbytes 页数：7 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

600 V, 8 A Q-Series PFC Diode

General Description This device has the lowest QRR of any 600 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Features • Low QRR, Low IRRM, Low tRR • High dIF/dt capable (1000A/µs) • Soft recovery Benefits • Increases efficiency • El

文件：135.05 Kbytes 页数：7 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司