SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

文件：35.96 Kbytes 页数：2 Pages

POLYFET

RF POWER LDMOS TRANSISTOR

文件：61.14 Kbytes 页数：2 Pages

POLYFET

RF POWER LDMOS TRANSISTOR

文件：61.14 Kbytes 页数：2 Pages

POLYFET

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

文件：256.45 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Divide by: 64/65/72 triple modulus low power ECL prescaler

DESCRIPTION The SA702 triple modulus (Divide By 64/65/72) low power ECL prescaler is used in synthesizer systems to achieve low phase lock time, broad operating range, high reference frequency and small frequency step sizes. The minimum supply voltage is 2.7V and is compatible with the CMOS UMA10

文件：80.77 Kbytes 页数：7 Pages

PHI

PHI

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

文件：36.44 Kbytes 页数：2 Pages

POLYFET