SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

文件：35.96 Kbytes 页数：2 Pages

Polyfet

RF POWER LDMOS TRANSISTOR

文件：61.14 Kbytes 页数：2 Pages

Polyfet

RF POWER LDMOS TRANSISTOR

文件：61.14 Kbytes 页数：2 Pages

Polyfet

NPN-OUTPUT DC-INPUT OPTOCOUPLER

FEATURES * Directly connectable to TTL * High collector-emitter voltage ( VCEO = 70V ) * High input-output isolation voltage ( Viso = 5,000Vrms ) * Response time ( tr : TYP. 2µs at VCC = 5V, IF = 10mA, RL = 75Ω ) * Current transfer ratio ( CTR : MIN. 40 at IF = 10mA, VCE =

文件：173.16 Kbytes 页数：10 Pages

LITEON

光宝科技

High Collector-Emitter Voltage Type Photocoupler

Features • High collector-emitter voltage(VCEO=70V) • High input-output isolation voltage: (VISO : 5,000Vrms) • Directly connectable to TTL • UL approved (No. E113898) • TUV approved (No.R9653630) • CSA approved (No. CA91533-1) • FIMKO approved (No. 193422) • NEMKO approved (No. P96103013)

文件：738.39 Kbytes 页数：4 Pages

TENAND

腾恩科技

NPN-OUTPUT DC-INPUT OPTOCOUPLER

FEATURES * Directly connectable to TTL * High collector-emitter voltage ( VCEO = 70V ) * High input-output isolation voltage ( Viso = 5,000Vrms ) * Response time ( tr : TYP. 2µs at VCC = 5V, IF = 10mA, RL = 75Ω ) * Current transfer ratio ( CTR : MIN. 40 at IF = 10mA, VCE =

文件：173.16 Kbytes 页数：10 Pages

LITEON

光宝科技