首页 >LP2935AIM>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Ultra-LowPowerSupervisorwithPower-FailOutput,SelectableThresholds | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
36VNano-CurrentTwoInputVoltageMonitor | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
Ultra-LowPowerSupervisorwithPower-FailOutput,SelectableThresholds | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
4-PhasePWMControllerforVR12.5Applications | MPSMonolithic Power Systems Inc. 美国芯源美国芯源系统有限公司 | MPS | ||
4-PhasePWMControllerforVR12.5Applications | MPSMonolithic Power Systems Inc. 美国芯源美国芯源系统有限公司 | MPS | ||
4-PhasePWMControllerforVR12.5Applications | MPSMonolithic Power Systems Inc. 美国芯源美国芯源系统有限公司 | MPS | ||
MOSFETN-Channel,EnhancementModeHighSpeedSwitch Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.638ΩTyp ●LowerLeakageCurrent:10µA(Max)@VDS=500V | NTE NTE Electronics | NTE | ||
2WattS-BandGaNDriverAmplifier KeyFeatures •FrequencyRange:2.7–3.5GHz •PSAT:33dBm(PIN=15dBm) •PAE:>52%(PIN=15dBm) •SmallSignalGain:28.4dB •Bias:VD=25V,IDQ=29mA •PackageDimensions:4.00x4.00x0.85mm Performanceistypicalacrossfrequency.Please referenceelectricalspecifi | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | QORVO | ||
2WattS-BandGaNDriverAmplifier KeyFeatures •FrequencyRange:2.7–3.5GHz •PSAT:33dBm(PIN=15dBm) •PAE:>52%(PIN=15dBm) •SmallSignalGain:28.4dB •Bias:VD=25V,IDQ=29mA •PackageDimensions:4.00x4.00x0.85mm Performanceistypicalacrossfrequency.Please referenceelectricalspecifi | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | QORVO | ||
CrystalUnitSMD1.6x1.224MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount1.6mmx1.2mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW |
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