丝印：MP2935；Package：QFN40；4-Phase PWM Controller for VR12.5 Applications

文件：1.043869 Mbytes 页数：42 Pages

MPS

美国芯源

Package：40-VFQFN 裸露焊盘；包装：管件 类别：集成电路（IC） 特殊用途稳压器 描述：IC REG CTRLR VR12.5 1OUT 40QFN

Monolithic Power Systems Inc.

Package：40-VFQFN 裸露焊盘；包装：卷带（TR）剪切带（CT） 类别：集成电路（IC） 特殊用途稳压器 描述：IC REG CTRLR VR12.5 1OUT 40QFN

Monolithic Power Systems Inc.

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.638Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 500V

文件：24.11 Kbytes 页数：3 Pages

NTE

2 Watt S-Band GaN Driver Amplifier

Key Features • Frequency Range: 2.7 – 3.5 GHz • PSAT : 33 dBm (PIN = 15 dBm) • PAE: > 52 % (PIN = 15 dBm) • Small Signal Gain: 28.4 dB • Bias: VD = 25 V, IDQ = 29 mA • Package Dimensions: 4.00 x 4.00 x 0.85 mm Performance is typical across frequency. Please reference electrical specifi

文件：986.95 Kbytes 页数：24 Pages

QORVO

威讯联合

2 Watt S-Band GaN Driver Amplifier

Key Features • Frequency Range: 2.7 – 3.5 GHz • PSAT : 33 dBm (PIN = 15 dBm) • PAE: > 52 % (PIN = 15 dBm) • Small Signal Gain: 28.4 dB • Bias: VD = 25 V, IDQ = 29 mA • Package Dimensions: 4.00 x 4.00 x 0.85 mm Performance is typical across frequency. Please reference electrical specifi

文件：986.95 Kbytes 页数：24 Pages

QORVO

威讯联合