LOW DROPOUT POSITVITE ADJUSTABLE REGULATOR

文件：962.27 Kbytes 页数：13 Pages

FCI

富加宜

LOW DROPOUT POSITVITE ADJUSTABLE REGULATOR

文件：962.27 Kbytes 页数：13 Pages

FCI

富加宜

LOW DROPOUT POSITVITE ADJUSTABLE REGULATOR

文件：962.27 Kbytes 页数：13 Pages

FCI

富加宜

LOW DROPOUT POSITVITE ADJUSTABLE REGULATOR

文件：962.27 Kbytes 页数：13 Pages

FCI

富加宜

LOW DROPOUT POSITVITE ADJUSTABLE REGULATOR

文件：962.27 Kbytes 页数：13 Pages

FCI

富加宜

Micropower Quad Operational Amplifier

General Description The LP124 series consists of four independent, high gain internally compensated micropower operational amplifiers. These amplifiers are specially suited for operation in battery systems while maintaining good input specifications, and extremely low supply current drain. In a

文件：230.02 Kbytes 页数：10 Pages

NSC

国半

Micropower Quad Operational Amplifier

General Description The LP124 series consists of four independent, high gain internally compensated micropower operational amplifiers. These amplifiers are specially suited for operation in battery systems while maintaining good input specifications, and extremely low supply current drain. In a

文件：230.02 Kbytes 页数：10 Pages

NSC

国半

1W POWER PHEMT

DESCRIPTION AND APPLICATIONS The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 1500 mm Schottky barrier gate. The recessed “mushroom” gate structure

文件：40.31 Kbytes 页数：2 Pages

FILTRONIC

PACKAGED 1W POWER PHEMT

DESCRIPTION AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed

文件：48.46 Kbytes 页数：3 Pages

FILTRONIC

Low Noise, High Linearity Packaged PHEMT

DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” g

文件：69.83 Kbytes 页数：2 Pages

FILTRONIC