600V, Triple N-Channel MOSFET with Common Gate Control

文件：238.66 Kbytes 页数：7 Pages

MPS

美国芯源

丝印：LN60A01E；Package：PDIP-8；600V, Triple N-Channel MOSFET with Common Gate Control

文件：238.66 Kbytes 页数：7 Pages

MPS

美国芯源

丝印：LN60A01E；Package：SOIC-8；600V, Triple N-Channel MOSFET with Common Gate Control

文件：238.66 Kbytes 页数：7 Pages

MPS

美国芯源

电压检测

\nLN60A是一款单节锂电池电量指示芯片，该芯片采用CMOS工艺实现，体积小，便于便携式产品安装。LN60A内置比较器和反馈回路，实现4个电压点的检测。通过内部修调技术，可以保证电压检测精度达到±1%。输出采用OPENDRAIN结构，便于客户使用IO口或者LED指示。 ·超低功耗：<10uA \n·内置4路比较器，实现4个电压点检测 \n·内部比较器具有合理的迟滞，便于做充放电指示 \n·高精度：±2%;

Natlinear

南麟

600V, Triple N-Channel MOSFET with Common Gate Control

The LN60A01 is a three channel, 600V N-Channel, enhancement mode power FET manufactured in MPS's proprietary, high-voltage DMOS technology.?This advanced technology has been especially tailored to minimize the on-state resistance, provide superior switching performance, and withstand high energy pul ● 600V Breakdown Voltage \n● Three N-Channel MOSFETs \n● One Gate control to All Three FETs \n● Rds(on)=200O at Vgs=10V \n● Switching Current>0.1A \n● Fast Switching;

MPS

美国芯源