Low Current Consumption, High Sensitivity CMOS Hall IC

■ Features  2.4V to 5.5V battery operation  Operation with North or South Pole  Chopper stabilized  Superior temperature stability  Extremely Low Switch-Point Drift  Insensitive to Physical Stress  Good RF noise immunity  ESD ＞ 4KV in human body mode  Lead Free Finish/RoHS Compli

文件：261.22 Kbytes 页数：5 Pages

NATLINEAR

南麟

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

文件：19.34 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

文件：19.34 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

SMPS-IC with MOSFET Driver Output

Features • High clock frequency • Low current drain • High reference accuracy • All monitoring functions

文件：918.75 Kbytes 页数：27 Pages

SIEMENS

西门子