LMX2335UTMX技术资料参数批发供应国半NSC-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
LMX2335UTMX	文件：3.12712 Mbytes Page：48 Pages	PLLatinum Ultra Low Power Dual Frequency Synthesizer for RF Personal Communications 文件：3.12712 Mbytes 页数：48 Pages	NSC 国半	NSC
NTE2335	文件：21.12 Kbytes Page：2 Pages	Silicon NPN Transistor Darlington w/Internal Zener Diode for Line Operated TV Features: • Excellent Wide Safe Operating Area • Included Avalanche Diode • High DC Current Gain 文件：21.12 Kbytes 页数：2 Pages	NTE	NTE
RF2335	文件：40.91 Kbytes Page：4 Pages	GENERAL PURPOSE AMPLIFIER Product Description The RF2335 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica 文件：40.91 Kbytes 页数：4 Pages	RFMD 威讯联合	RFMD
RF2335PCBA	文件：40.91 Kbytes Page：4 Pages	GENERAL PURPOSE AMPLIFIER Product Description The RF2335 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica 文件：40.91 Kbytes 页数：4 Pages	RFMD 威讯联合	RFMD

型号：
LMX2335UTMX
制造商：
NSC
制造商全称：
National Semiconductor
功能描述：
PLLatinum Ultra Low Power Dual Frequency Synthesizer for RF Personal Communications

更多LMX2335UTMX供应商更新时间2026-3-31 15:25:00