RF2335中文资料威讯联合数据手册PDF规格书

Product Description

The RF2335 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified. The RF2335 is available in a very small industry-standard SOT23 5-lead surface mount package, enabling compact designs which conserve board space

特性 Features

• DC to 6000MHz Operation

• Internally matched Input and Output

• 12dB Small Signal Gain

• +33dBm Output IP3

• +17dBm Output Power

• Good Gain Flatness

Typical Applications

• Broadband, Low Noise Gain Blocks

• IF or RF Buffer Amplifiers

• Driver Stage for Power Amplifiers

• Final PA for Low Power Applications

• Broadband Test Equipment