PLLatinum Ultra Low Power Dual Frequency Synthesizer for RF Personal Communications

文件：3.12712 Mbytes 页数：48 Pages

NSC

国半

Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode

Features: • 60V Zener Diode Built–In Between Collector and Base • Low Fluctuation in Breakdown Voltages • High Energy Handling Capability • High Speed Switching

文件：23.21 Kbytes 页数：2 Pages

NTE

GENERAL PURPOSE AMPLIFIER

Product Description The RF2336 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：40.76 Kbytes 页数：4 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2336 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：40.76 Kbytes 页数：4 Pages

RFMD

威讯联合