丝印：NCE60P04R；Package：SOT-223-3L；P-Channel Enhancement Mode Power MOSFET

文件：1.00162 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

POWER FIELD EFFECT TRANSISTOR

POWER FIELD EFFECT TRANSISTOR

文件：177.75 Kbytes 页数：5 Pages

Motorola

摩托罗拉

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

文件：345.27 Kbytes 页数：2 Pages

ISC

无锡固电

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

文件：378.06 Kbytes 页数：2 Pages

ISC

无锡固电