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MSB1218A-RT1

PNPGENERALPURPOSEAMPLIFIERTRANSISTORSSURFACEMOUNT

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MSB1218A-RT1

PNPGENERALPURPOSEAMPLIFIERTRANSISTORSSURFACEMOUNT

ThisPNPSiliconEpitaxialPlanarTransistorisdesignedforgeneralpurposeamplifierapplications.ThisdeviceishousedintheSC–70/SOT–323packagewhichisdesignedforlowpowersurfacemountapplications. •HighhFE,210–460 •LowVCE(sat),

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MSB1218A-RT1G

PNPSiliconGeneralPurposeAmplifierTransistor

ThisPNPSiliconEpitaxialPlanarTransistorisdesignedforgeneralpurposeamplifierapplications.ThisdeviceishousedintheSC--70/SOT--323packagewhichisdesignedforlowpowersurfacemountapplications. Features •HighhFE,210--460 •LowVCE(sat),

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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