LM74670-Q1中文资料德州仪器数据手册PDF规格书

1 Features

1• AEC-Q100 Qualified With the Following Results:

– Device Temperature Grade 1: –40°C to

+125°C Ambient Operating Temperature

Range

– Exceeds HBM ESD Classification Level 2

– Device CDM ESD Classification Level C4B

• Peak Input AC Voltage: 42 V

• Zero IQ

• Charge Pump Gate Driver for external N-Channel

MOSFET

• Low Forward-Voltage Drop and Less Power

Dissipation Compared to Schottky Diode

• Capable of handling AC signal up to 300-Hz

Frequency

2 Applications

• AC Rectifier

• Alternator

• Power Tools

• Reverse Polarity Protection

3 Description

The LM74670-Q1 is a controller device that can be

used with an N-Channel MOSFET in full or half

bridge rectifier architectures for alternators. It is

designed to drive an external MOSFET to emulate an

ideal diode. A unique advantage of this scheme is

that it is not ground referenced, thus it has zero IQ.

The schottky diodes in full or half bridge rectifiers and

alternators can be replaced with the LM74670-Q1

solution to avoid forward conduction diode losses and

produce more efficient AC-DC converters.

The LM74670-Q1 controller provides a gate drive for

external N-Channel MOSFET and a fast response

internal comparator to pull-down the MOSFET Gate

in the event of reverse polarity. This device can

support an AC signal frequency up to 300Hz.