LM74610-Q1中文资料德州仪器数据手册PDF规格书

1 Features

1• Qualified for Automotive Applications

• AEC-Q100 Qualified With the Following Results:

– Exceeds HBM ESD Classification Level 2

– Device CDM ESD Classification Level C4B

• Maximum reverse voltage of 45 V

• No Positive Voltage limitation to Anode Terminal

• Charge Pump Gate Driver for External N-Channel

MOSFET

• Lower Power Dissipation than Schottky

Diode/PFET Solutions

• Low Reverse Leakage Current

• Zero IQ

• Fast 2-μs Response to Reverse Polarity

• -40°C to +125°C Operating Ambient Temperature

• Can be Used in OR-ing Applications

• Meets CISPR25 EMI Specification

• Meets Automotive ISO7637 Transient

Requirements with a Suitable TVS Diode

• No Peak Current Limit

2 Applications

• ADAS

• Infotainment Systems

• Power Tools (Industrial)

• Transmission Control Unit (TCU)

• Battery OR-ing Applications

3 Description

The LM74610-Q1 is a controller device that can be

used with an N-Channel MOSFET in a reverse

polarity protection circuitry. It is designed to drive an

external MOSFET to emulate an ideal diode rectifier

when connected in series with a power source. A

unique advantage of this scheme is that it is not

referenced to ground and thus has Zero Iq.

The LM74610-Q1 controller provides a gate drive for

an external N-Channel MOSFET and a fast response

internal comparator to discharge the MOSFET Gate

in the event of reverse polarity. This fast pull-down

feature limits the amount and duration of reverse

current flow if opposite polarity is sensed. The device

design also meets CISPR25 Class 5 EMI

specifications and automotive ISO7637 transient

requirements with a suitable TVS diode.