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MMA710

DCto4GHzAmplifier

AEROFLEXCobham Corporate

艾法斯

MSB710

PNPGeneralPurposeAmplifierTransistorSurfaceMount

PNPGeneralPurposeAmplifierTransistorSurfaceMount

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

MVCO710

SMTVoltageControlledOscillator

BOWEIBOWEI Integrated Circuits CO.,LTD.

博威集成电路河北博威集成电路有限公司

MZ710

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.

MicrosemiMicrosemi Corporation

美高森美美高森美公司

NA-710

SupportsCaviumCN1005acceleratoronboard

AXIOMTEKAxiomtek Co., Ltd.

艾讯股份有限公司

NDB710A

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NDB710A

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NDB710AE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=42A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=38mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NDB710AE

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NDB710B

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NDB710B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NDB710BE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NDB710BE

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NDP710A

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NDP710A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=42A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=38mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NDP710AE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=42A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=38mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NDP710AE

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NDP710B

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NDP710B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NDP710BE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    LM710CN/A+

  • 功能描述:

    Analog Comparator

供应商型号品牌批号封装库存备注价格
NS/国半
23+
DIP
50000
全新原装正品现货,支持订货
询价
NS/国半
2022
DIP
80000
原装现货,OEM渠道,欢迎咨询
询价
NS/国半
21+
DIP-14
5000
原装现货/假一赔十/支持第三方检验
询价
NSC
22+
CAN8
2250
100%全新原装公司现货供应!随时可发货
询价
原厂正品
23+
CAN-8
5000
原装正品,假一罚十
询价
NS
TO-5
245
询价
NS
2020+
2
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
NS
23+
CAN
8500
全新原装现货,公司只做原装。
询价
NS
23+
原厂封装
9823
询价
NSC
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
更多LM710CN/A+供应商 更新时间2024-6-14 13:32:00