NTD4906N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=54A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NTD4906N

PowerMOSFET30V,54A,SingleN?묬hannel,DPAK/IPAK

NTE4906

SurgeClamping,TransientOvervoltageSuppressorUnidirectional

Description: TheNTE4900seriesofsiliconTransientSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighenergyvoltagetransients.Transientovervoltagesuppressordeviceshavebecomeveryimportantasaconsequenceoftheirhighsurgecapability,extremelyfastresponsetime

PCA4906

ConverterforConnecting42-pinRSSEmulatorMCUto32-pin1.778mm-pitchSDIP

PE4906

75OhmSMCJackBulkheadConnectorClamp-SolderAttachmentForRG179,RG187

RN4906

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuit. AndDriverCircuitApplications. •IncludeingtwodevicesinUS6(ultrasuperminitypewith6leads) •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess

RN4906FE

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications. •TwodevicesareincorporatedintoanExtreme-Super-Mini(6pin)package. •Incorporatingabiasresistorintoatransistorreducespartscount. Reducingthepartscountenablethemanufactureofevermore

S4906WB

5GHzbroadbandWLAN

SI4906DY

DualN-Channel40-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •CCFLInverter

SI4906DY

DualN-Channel40-V(D-S)MOSFET