首页 >LM2716MT-LF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MICROPROCESSOR&MEMORYCIRCUITS | NTE NTE Electronics | NTE | ||
IntegratedCircuitNMOS,16KUVErasablePROM Description: TheNTE2716isa16,384–bit(2048x8–bit)ErasableandElectricallyReprogrammablePROMina24–LeadDIPtypepackagedesignedforsystemdebugusageandsimilarapplicationsrequiringnonvolatilememorythatcouldbereprogrammedperiodically.Thetransparentlidonthepackagea | NTE NTE Electronics | NTE | ||
DATABUSINTERFACETRANSFORMERSLOWPROFILESINGLE/DUAL | PMI Premier Magnetics, Inc. | PMI | ||
LOWCOST-HIGHPERFORMANCEPHASELOCKEDLOOP | ZCOMM Z-Communications, Inc | ZCOMM | ||
VerysmallSMTpackage | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | OSRAM | ||
SiliconPNPhotodiodewithV貫Characteristics | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | OSRAM | ||
2048-WORDBY8-BITERASABLEPROGRAMMABLEREAD-ONLYMEMORIES | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
CrystalUnitSMD2.5x2.012.0MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2716AGRisP-ChannelMOSFieldEffect Transistordesignedforpowermanagementapplicationsof notebookcomputersandLithium-Ionbatteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=−10V,ID=−7.0A) RDS(on)2=11.3mΩMAX.(VGS | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2716GRisP-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=–10V,ID=–7.0A) RDS(on)2=11.3mΩMAX.(VGS=–4. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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