NTE2716

MICROPROCESSOR&MEMORYCIRCUITS

NTE2716

IntegratedCircuitNMOS,16KUVErasablePROM

Description: TheNTE2716isa16,384–bit(2048x8–bit)ErasableandElectricallyReprogrammablePROMina24–LeadDIPtypepackagedesignedforsystemdebugusageandsimilarapplicationsrequiringnonvolatilememorythatcouldbereprogrammedperiodically.Thetransparentlidonthepackagea

PM-DB2716

DATABUSINTERFACETRANSFORMERSLOWPROFILESINGLE/DUAL

PSN2716A

LOWCOST-HIGHPERFORMANCEPHASELOCKEDLOOP

SFH2716

VerysmallSMTpackage

SFH-2716

SiliconPNPhotodiodewithV貫Characteristics

TMS2716

2048-WORDBY8-BITERASABLEPROGRAMMABLEREAD-ONLYMEMORIES

TZ2716A

CrystalUnitSMD2.5x2.012.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

UPA2716AGR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2716AGRisP-ChannelMOSFieldEffect Transistordesignedforpowermanagementapplicationsof notebookcomputersandLithium-Ionbatteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=−10V,ID=−7.0A) RDS(on)2=11.3mΩMAX.(VGS

UPA2716GR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2716GRisP-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=–10V,ID=–7.0A) RDS(on)2=11.3mΩMAX.(VGS=–4.