| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Small Signal Schottky Barrier Diodes Features • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupl 文件:98.54 Kbytes 页数:5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Small Signal Schottky Barrier Diodes Features • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupl 文件:98.54 Kbytes 页数:5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Small Signal Schottky Diodes Features ● Integrated protection ring against static discharge ● Low capacitance ● Low leakage current ● Low forward voltage drop Applications HF–Detector Protection circuit Small battery charger AC–DC / DC–DC converters 文件:125.96 Kbytes 页数:5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Small Signal Schotty Diodes Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop Applications • HF-detector • Protection circuit • Small battery charger • AC-DC/DC-DC converters 文件:819.61 Kbytes 页数:4 Pages | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | SKTECHNOLGY | ||
Small Signal Schottky Diodes VOLTAGE RANGE: 40 -- 20 V CURRENT: 400 mW Features ◇ For general purpose applications ◇ Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing 文件:152.46 Kbytes 页数:2 Pages | LUGUANG 鲁光电子 | LUGUANG | ||
SMALL SIGNAL SCHOTTKY DIODES FEATURES • For general purpose applications • The LL103 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupli 文件:86.34 Kbytes 页数:3 Pages | JINANJINGHENG 晶恒集团 | JINANJINGHENG | ||
SMALL SIGNAL SCHOTTKY DIODES FEATURES • For general purpose applications • The LL103 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupli 文件:42.83 Kbytes 页数:3 Pages | JINGHENG 晶恒 | JINGHENG | ||
FAST SWITCHING DIODES VOLTAGE RANGE: 40 -- 20 V CURRENT: 400 mW FEATURES ◇ For general purpose applications ◇ fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal 文件:367.52 Kbytes 页数:2 Pages | OLITECH 奥力特 | OLITECH | ||
SILICON SCHOTTKY BARRIER DIODES SILICON SCHOTTKY BARRIER DIODES for general purpose applications The LL103A, B, C is a metal on Silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and co 文件:203.34 Kbytes 页数:4 Pages | SEMTECH_ELEC 先之科半导体 | SEMTECH_ELEC | ||
Schottky Diodes FEATURES ♦ For general purpose applications. ♦ The LL103A, B, C is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ♦ The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coup 文件:131.4 Kbytes 页数:3 Pages | GE | GE |
技术参数
- Polality:
N-ch + P-ch
- VDSS(V):
20/-20
- VGSS(V):
+/-10
- ID:
Q1(A)
- ID:
Q2(A)
- PD(W):
0.5
- Ciss:
Q1(pF)Typ.
- Ciss:
Q2(pF)Typ.
- Qg:
Q1(nC)Typ.
- Qg:
Q2(nC)Typ.
- RDS(ON):
Q1(Ω)VGS=2.5VMax
- RDS(ON):
Q2(Ω)VGS=-2.5VMax
- Number of pins:
6
- Surface mount package:
Y
- Package name(Toshiba):
UF6
- AEC-Q101:
Qualified(*)
- Generation:
U-MOSⅢ/U-MOSⅢ
- Width×Length×Height(mm):
2.0 x 2.1 x 0.7
- Package Size(mm2):
4.20
- Drive voltage type:
Low Voltage Gate Drive
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
2025+ |
UF6 |
5000 |
原装进口,免费送样品! |
询价 | ||
TOSHIBA |
16+ |
UF6 |
3000 |
进口原装现货/价格优势! |
询价 | ||
TOSHIBA |
24+ |
UF6 |
44590 |
原装现货假一罚十 |
询价 | ||
TOSHIBA |
24+ |
SOT-363 |
9700 |
绝对原装正品现货假一罚十 |
询价 | ||
TOSHIBA/东芝 |
2019+PB |
UF6 |
44590 |
原装正品 可含税交易 |
询价 | ||
TOSHIBA |
13+ |
SOT363 |
756 |
只做原装正品 |
询价 | ||
TOSHIBA/东芝 |
2026+ |
UF6 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
询价 | ||
TOSHIBA/东芝 |
24+ |
SOT-363 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
TOSHIBA(东芝) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
TOSHIBA/东芝 |
23+ |
SOT-363 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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